CS20-22MOF1 IXYS, CS20-22MOF1 Datasheet
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CS20-22MOF1
Manufacturer Part Number
CS20-22MOF1
Description
THYRISTOR PHASE 2200V I4-PAC
Manufacturer
IXYS
Datasheet
1.CS20-22MOF1.pdf
(2 pages)
Specifications of CS20-22MOF1
Scr Type
Standard Recovery
Voltage - Off State
2200V
Voltage - Gate Trigger (vgt) (max)
2.3V
Voltage - On State (vtm) (max)
1.5V
Current - On State (it (av)) (max)
18A
Current - Gate Trigger (igt) (max)
250mA
Current - Hold (ih) (max)
150mA
Current - Off State (max)
50µA
Current - Non Rep. Surge 50, 60hz (itsm)
200A @ 50Hz
Operating Temperature
-40°C ~ 125°C
Mounting Type
Through Hole
Package / Case
i4-PAC™
Vrrm, Vdrm, (v)
2200
Itavm, (a)
18
@ Tc, (°c)
85
Itrms, (a)
-
Itsm, 10ms, Tvj = 45°c, (a)
200
Itsm, 8.33ms, Tvj = 45°c, (a)
215
[dv/dt] C, (v/µs)
2500
Vt0, (v)
-
Rt, (mohm)
-
Tvjm, (°c)
125
Rthjc, Max, (k/w)
0.92
Rthch, (k/w)
0.15
Package Style
ISOPLUS i4-PAC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - On State (it (rms) (max)
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CS20-22MOF1
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
High Voltage
Phase Control
Thyristor
in High Voltage
ISOPLUS i4-PAC
2300
Symbol
V
I
I
I
(di/dt)
(dv/dt)
Symbol
V
V
I
V
I
I
I
t
I
R
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
V
V
Thyristors
T(AV)
T(AV)
TSM
GT
GD
L
H
R
gd
DRM
T
GT
GD
, I
thJC
RSM
DSM
V
D
, V
cr
cr
RRM
V
V
2200
RRM
DRM
V
Conditions
sine 180°; T
square; d =
sine 180°; t = 10 ms; V
T
f = 50 Hz, t
V
I
di
T
R
Conditions
I
V
T
t
I
V
V
I
V
DC current
G
T
P
G
G
VJ
VJ
VJ
D
D
D
D
R
G
GK
= 10 ms; V
= 0.45 A
= 0.45 A; di
= 0.45 A; di
/dt = 0.45 A/µs
=
= 6 V
= 6 V; R
= ½ V
= V
= T
= T
= T
= 20 A; T
= ¥; method 1 (linear voltage rise)
2
/
3
RRM
VJM
VJM
VJM
V
DRM
DRM
;
; V
; V
P
GK
1
C
= 200 µs
T
D
D
Type
D
TM
/
VJ
3
VJ
= 90°C
=
G
= ¥
G
= V
= 6 V
; T
CS 20-22moF1
/dt = 0.45 A/µs
/dt = 0.45 A/µs
= 25°C
=125°C
2
/
C
3
DRM
= 90°C
V
DRM
;T
T
repetitive, I
non repetitive, I
V
VJ
VJ
R
DR
= 0 V; T
= 25°C
= 125°C
=
2
/
3
V
(T
Advanced Technical Information
DRM
VJ
VJ
T
= 40 A
= 25°C, unless otherwise specified)
= 25°C
T
= 20 A
min.
Characteristic Values
Maximum Ratings
typ.
1.3
1.3
2200
2500
2
200
100
250
18
16
max.
0.92 K/W
250 mA
500 mA
1.5
2.3
0.2
50 µA
5 mA
2
A/µs
A/µs
V/µs
mA
mA
µs
V
A
A
A
V
V
V
V
V
I
I
Features
• high voltage thyristor
• ISOPLUS i4-PAC
Applications
• controlled rectifiers
• AC switches
• capacitor discharge control
T(AV)
TSM
- for line frequency
- chip technology for long term
high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high
- application friendly pinout
- high reliability
- industry standard outline
- power supplies
- drives
- flash tubes
- x ray and laser generators
DRM
stability
voltage pins
1
= V
5
RRM
CS 20-22moF1
TM
= 2200 V
= 18 A
= 200 A
1 - 2
Related parts for CS20-22MOF1
CS20-22MOF1 Summary of contents
Page 1
... V = ½ DRM /dt = 0.45 A/µ RRM D DRM current thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved Advanced Technical Information Maximum Ratings 2200 25°C 200 100 250 2500 DR 3 DRM Characteristic Values (T = 25°C, unless otherwise specified) VJ min ...
Page 2
... ISOL F mounting force with clip C Symbol Conditions pin - K pin pin - backside metal with heatsink compound thCH Weight © 2002 IXYS All rights reserved Dimensions 0.0394") Maximum Ratings °C -40...+125 °C -55...+125 2500 V~ 20...120 N Characteristic Values min. typ. max 5.5 mm 0.15 ...