BT258X-800R,127 NXP Semiconductors, BT258X-800R,127 Datasheet - Page 4
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BT258X-800R,127
Manufacturer Part Number
BT258X-800R,127
Description
THYRISTOR 800V 8A SOT186A
Manufacturer
NXP Semiconductors
Datasheet
1.BT258X-500R127.pdf
(6 pages)
Specifications of BT258X-800R,127
Package / Case
TO-220-3 Full Pack
Scr Type
Sensitive Gate
Voltage - Off State
800V
Voltage - Gate Trigger (vgt) (max)
1.5V
Voltage - On State (vtm) (max)
1.6V
Current - On State (it (av)) (max)
5A
Current - On State (it (rms)) (max)
8A
Current - Gate Trigger (igt) (max)
200µA
Current - Hold (ih) (max)
6mA
Current - Off State (max)
500µA
Current - Non Rep. Surge 50, 60hz (itsm)
75A, 82A
Operating Temperature
-40°C ~ 125°C
Mounting Type
Through Hole
Current - On State (it (rms) (max)
8A
Breakover Current Ibo Max
82 A
Rated Repetitive Off-state Voltage Vdrm
800 V
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Forward Voltage Drop
1.6 V
Gate Trigger Voltage (vgt)
1.5 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
0.2 mA
Holding Current (ih Max)
6 mA
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934042990127
BT258X-800R
BT258X-800R
BT258X-800R
BT258X-800R
Philips Semiconductors
October 2002
Thyristors
logic level
Fig.8. Normalised latching current I
Fig.9. Normalised holding current I
2.5
1.5
0.5
2.5
1.5
0.5
I
2.5
1.5
0.5
GT
3
2
1
0
3
2
1
0
3
2
1
0
-50
-50
-50
(T
IL(25 C)
IH(25 C)
IGT(25 C)
IL(Tj)
IGT(Tj)
IH(Tj)
j
Fig.7. Normalised gate trigger current
)/ I
GT
versus junction temperature T
versus junction temperature T
(25˚C), versus junction temperature T
0
0
0
BT150
Tj / C
Tj / C
Tj / C
50
50
50
100
100
100
H
L
(T
(T
j
j
)/ I
)/ I
j
j
.
.
H
L
(25˚C),
(25˚C),
150
150
150
j
.
4
Fig.12. Typical, critical rate of rise of off-state voltage,
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
1000
100
0.01
10
0.1
10
1
10us
1
30
20
10
0
dVD/dt (V/us)
0
dV
Zth j-hs (K/W)
0
I T / A
T j = 125 C
T j = 25 C
D
Vo = 1 V
Rs = 0.04
/dt versus junction temperature T
0.1ms
0.5
without heatsink compound
pulse width t
1ms
50
tp / s
10ms
Tj / C
V T / V
1
P
D
typ
p
with heatsink compound
0.1s
.
BT258X series
100
Product specification
RGK = 100 ohms
max
t
p
1.5
1s
th j-hs
t
, versus
Rev 2.000
j
.
10s
150
2