BT152X-800R,127 NXP Semiconductors, BT152X-800R,127 Datasheet - Page 2

• Manufacturer Part Number: BT152X-800R,127
• Description: THYRISTOR 800V 20A SOT186A
• Manufacturer: NXP Semiconductors

Specifications of BT152X-800R,127

• Package / Case: TO-220-3 Full Pack
• Scr Type: Standard Recovery
• Voltage - Off State: 800V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.75V
• Current - On State (it (av)) (max): 13A
• Current - On State (it (rms)) (max): 20A
• Current - Gate Trigger (igt) (max): 32mA
• Current - Hold (ih) (max): 60mA
• Current - Off State (max): 1mA
• Current - Non Rep. Surge 50, 60hz (itsm): 200A, 220A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 20A
• Breakover Current Ibo Max: 220 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 1 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 32 mA
• Holding Current (ih Max): 60 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934044360127; BT152X-800R; BT152X-800R

Philips Semiconductors
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
October 1997
Thyristors
hs
SYMBOL
V
C
SYMBOL PARAMETER
R
R
R
j
SYMBOL PARAMETER
I
I
I
V
V
I
j
SYMBOL PARAMETER
dV
t
t
GT
L
H
D
gt
q
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
isol
T
GT
isol
th j-hs
th j-hs
th j-a
, I
= 25 ˚C unless otherwise specified
D
R
/dt
Thermal resistance
junction to heatsink
Thermal resistance
junction to heatsink
Thermal resistance
junction to ambient
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
PARAMETER
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
with heatsink compound
without heatsink compound
in free air
CONDITIONS
V
V
V
I
V
V
V
CONDITIONS
V
exponential waveform gate open circuit
V
I
V
I
dV
T
TM
TM
D
D
D
D
D
D
DM
D
D
= 40 A
D
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= V
= V
= V
= 40 A
= 67% V
= 50 A; V
/dt = 50 V/ s; R
= 67% V
CONDITIONS
waveform;
R.H.
DRM(max)
DRM(max)
DRM(max)
T
GT
GT
T
DRM(max)
R
DRM(max)
= 0.1 A
= 0.1 A
; I
; V
; I
65% ; clean and dustfree
= 0.1 A
= 0.1 A
= 25 V; dI
T
G
R
2
= 0.1 A; T
= 0.1 A; dI
= V
; T
; T
GK
RRM(max)
j
= 125 ˚C;
j
= 100
= 125 ˚C;
TM
/dt = 30 A/ s;
j
G
= 125 ˚C
; T
/dt = 5 A/ s;
j
= 125 ˚C
MIN.
MIN.
MIN.
MIN.
0.25
200
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
TYP.
TYP.
TYP.
300
10
1.4
0.6
0.4
0.2
55
25
15
70
BT152X series
3
2
-
-
Product specification
MAX.
2500
MAX.
MAX.
MAX.
1.75
4.0
5.5
1.5
1.0
32
80
60
-
-
-
-
-
-
Rev 1.100
UNIT
UNIT
UNIT
UNIT
V/ s
K/W
K/W
K/W
mA
mA
mA
mA
pF
V
V
V
V
s
s