UMZ1NTR Rohm Semiconductor, UMZ1NTR Datasheet - Page 4

• Manufacturer Part Number: UMZ1NTR
• Description: TRANS NPN/PNP 50V 150MA SOT-363
• Manufacturer: Rohm Semiconductor

Specifications of UMZ1NTR

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 150mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 150mW
• Frequency - Transition: 180MHz, 140MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Module Configuration: Dual
• Transistor Polarity: NPN / PNP
• Collector Emitter Voltage V(br)ceo: 50V
• Gain Bandwidth Ft Typ: 180MHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: 150mA
• Operating: RoHS Compliant
• Configuration: Dual
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: + 50 V / - 50 V
• Emitter- Base Voltage Vebo: + 7 V, - 6 V
• Continuous Collector Current: + 150 mA / - 150 mA
• Maximum Dc Collector Current: 0.15 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 180 MHz at NPN, 140 MHz at PNP
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 120
• Gain Bandwidth Product Ft: 180 MHz, 140 MHz
• Dc Current Gain Hfe: 120
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: UMZ1NTRTR

Transistors
Tr
2
−0.05
−0.5
−0.2
−0.1
500
200
100
Fig.18 Collector-emitter saturation
−50
−20
−10
−0.5
−0.2
−0.1
(PNP)
50
−5
−2
−1
Fig.12 Grounded emitter propagation
−0.2
−1
−0.2
−0.2
Fig.15 DC current gain vs. collector
Ta=25˚C
Ta=100˚C
BASE TO EMITTER VOLTAGE : V
COLLECTOR CURRENT : I
−0.5 −1
−0.5 −1
−0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
−
voltage vs. collector current ( II )
characteristics
COLLECTOR CURRENT : I
25˚C
40˚C
current ( I )
Ta=100˚C
−2
−40˚C
−2
25˚C
V
−5
CE
−5 −10 −20
=−5V
−3V
−1V
−10 −20
C
(mA)
V
C
l
C
CE
/l
(mA)
−50 −100
B
=
−50 −100
BE
=10
−
6V
(V)
1000
500
200
100
500
200
100
50
50
−10
−0.2
Fig.16 DC current gain vs. collector
0.5
Fig.19 Gain bandwidth product vs.
−8
−6
−4
−2
COLLECTOR TO EMITTER VOLTAGE : V
0
Ta=25˚C
Fig.13 Grounded emitter output
−0.5 −1
1
EMITTER CURRENT : I
COLLECTOR CURRENT : I
−0.4
current ( II )
emitter current
2
characteristics ( I )
Ta=100˚C
−2
−0.8
−40˚C
25˚C
5
−5 −10 −20
10
−1.2
20
E
(mA)
Ta=25˚C
V
CE
−1.6
C
V
=− 12V
(mA)
CE
−31.5
−28.0
−24.5
−17.5
−14.0
−10.5
−21.0
−35.0
−7.0
−3.5µA
50
=−6V
−50 −100
I
B
=0
CE
100
−2.0
(V)
EMZ1 / UMZ1N / IMZ1A
Fig.20 Collector output capacitance vs.
−0.05
Fig.17 Collector-emitter saturation
−0.5
−0.2
−0.1
−100
−80
−60
−40
−20
−1
20
10
−0.2
5
2
COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE
COLLECTOR TO EMITTER VOLTAGE : V
0
Ta=25˚C
Fig.14 Grounded emitter output
-0.5
Emitter input capacitance vs.
−500
−450
−400
−350
−300
−0.5 −1
COLLECTOR CURRENT : I
collector-base voltage
emitter-base voltage
voltage vs. collector current ( I )
−1
-1
characteristics ( II )
I
C
/I
−2
B
=50
-2
−2
Rev.A
20
10
−5 −10 −20
-5
−3
-10
C
Ta=25˚C
Ta=25˚C
(mA)
f = 1MHz
I
I
: V
E
C
−4
=0A
=0A
−50µA
CB
EB
−250
−200
−150
−100
−50 −100
-20
I
(V)
(V)
B
=0
CE
4/4
(V)
−5