UMY1NTR Rohm Semiconductor, UMY1NTR Datasheet - Page 3

• Manufacturer Part Number: UMY1NTR
• Description: TRANS NPN/PNP 50V 150MA SOT-353
• Manufacturer: Rohm Semiconductor

Specifications of UMY1NTR

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 150mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 150mW
• Frequency - Transition: 180MHz, 140MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
• Module Configuration: Dual
• Transistor Polarity: NPN / PNP
• Collector Emitter Voltage V(br)ceo: 50V
• Gain Bandwidth Ft Typ: 180MHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: 150mA
• Operating: RoHS Compliant
• Configuration: Dual
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 50 V, 50 V
• Emitter- Base Voltage Vebo: - 6 V, + 7 V
• Continuous Collector Current: - 150 mA, 150 mA
• Maximum Dc Collector Current: 0.15 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 180 MHz at NPN, 140 MHz at PNP
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 120
• Gain Bandwidth Product Ft: 140 MHz, 180 MHz
• Dc Current Gain Hfe: 120
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Transistors
Tr
−0.05
2
Fig.10 Grounded emitter propagation
500
200
100
−0.5
−0.2
−0.1
0.5
0.2
0.1
50
(NPN)
50
20
10
Fig.7 Collector-emitter saturation
−0.2
−1
−0.2
5
2
1
0
Fig.4 DC current gain vs. collector
Ta=25˚C
BASE TO EMITTER VOLTAGE : V
COLLECTOR CURRENT : I
0.2
−0.5 −1
characteristics
−0.5 −1
voltage vs. collector current ( II )
COLLECTOR CURRENT : I
current ( I )
0.4
Ta=100˚C
0.6
−2
−40˚C
−2
25˚C
0.8
V
−5
CE
−5 −10 −20
=−5V
1.0
−3V
−1V
−10 −20
1.2
C
(mA)
V
C
l
1.4
C
CE
/l
(mA)
−50 −100
BE
B
= 6V
−50 −100
=10
(V)
1.6
100
500
200
100
1000
COLLECTOR TO EMITTER VOLTAGE : V
80
60
40
20
500
200
100
50
−0.2
0
50
Fig.5 DC current gain vs. collector
0.5
Fig.8 Gain bandwidth product vs.
Fig.11 Grounded emitter output
0
Ta=25˚C
−0.5 −1
COLLECTOR CURRENT : I
1
EMITTER CURRENT : I
0.4
current ( II )
emitter current
characteristics ( I )
2
Ta=100˚C
−2
0.8
−40˚C
25˚C
5
−5 −10 −20
10
1.2
20
E
(mA)
Ta=25˚C
V
C
1.6
V
CE
(mA)
CE
0.50mA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
=− 12V
I
B
=−6V
−50 −100
=0A
50
CE
(V)
2.0
100
EMY1 / UMY1N / FMY1A
−0.05
−0.5
−0.2
−0.1
Fig.9 Collector output capacitance vs.
−1
10
−0.2
8
6
4
2
0
Fig.6 Collector-emitter saturation
COLLECTOR TO EMITTER VOLTAGE : V
0
20
10
5
2
Ta=25˚C
COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE
Fig.12 Grounded emitter output
−0.5 −1
COLLECTOR CURRENT : I
-0.5
Emitter input capacitance vs.
collector-base voltage
emitter-base voltage
voltage vs. collector current ( I )
4
characteristics ( II )
I
-1
C
/I
−2
B
=50
8
Rev.A
20
10
-2
−5 −10 −20
30µA
27µA
24µA
21µA
18µA
15µA
12µA
I
B
9µA
6µA
3µA
=0A
12
-5
C
Ta=25˚C
(mA)
16
-10
Ta=25˚C
f = 1MHz
I
I
: V
−50 −100
E
C
=0A
=0A
CB
EB
-20
CE
(V)
(V)
3/4
20
(V)