UMX2NTR Rohm Semiconductor, UMX2NTR Datasheet - Page 3

• Manufacturer Part Number: UMX2NTR
• Description: TRANS DUAL NPN 50V 150MA SOT-363
• Manufacturer: Rohm Semiconductor

Specifications of UMX2NTR

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 150mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 150mW
• Frequency - Transition: 180MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Module Configuration: Dual
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 50V
• Gain Bandwidth Ft Typ: 180MHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: 150mA
• Operating Temperature: RoHS Compliant
• Configuration: Dual
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 7 V
• Continuous Collector Current: 150 mA
• Maximum Dc Collector Current: 0.15 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 180 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 120
• Gain Bandwidth Product Ft: 180 MHz
• Dc Current Gain Hfe: 120
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: UMX2NTRTR

Transistors
Fig.7 Collector-emitter saturation
Fig.10
0.05
0.02
0.01
0.5
0.2
0.1
0.2
20
10
5
2
1
0.2
voltage vs. collector current ( Ι )
COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE
0.5 1
COLLECTOR CURRENT : I
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Collector output capacitance vs.
Ta=100°C
0.5
−55°C
25°C
1
2
2
5 10
5
20
10
C
50 100 200
(mA)
Ta=25°C
I
f = 1MHz
I
I
C
E
C
/I
20
=0A
=0A
B
: V
=10
CB
EB
(V)
(V)
50
Fig.8 Collector-emitter saturation
0.05
0.02
0.01
0.5
0.2
0.1
Fig.11 Base-collector time constant
200
100
0.2
50
20
10
−0.2
voltage vs. collector current (ΙΙ)
0.5 1
COLLECTOR CURRENT : I
Ta=100°C
vs. emitter current
EMITTER CURRENT : I
−0.5
−55°C
25°C
2
−1
5 10
−2
20
C
E
(mA)
I
(mA)
C
/I
Ta=25°C
f=32MH
V
B
−5
50 100
=50
CB
=6V
−10
Z
EMX2 / UMX2N / IMX2
Fig.9 Gain bandwidth product vs.
500
200
100
50
−0.5 −1
emitter current
EMITTER CURRENT : I
−2
Rev.A
−5
−10 −20
E
(mA)
Ta=25°C
V
CE
−50 −100
=6V
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