EMX3T2R Rohm Semiconductor, EMX3T2R Datasheet - Page 3

• Manufacturer Part Number: EMX3T2R
• Description: TRANS DUAL NPN 50V 150MA EMT6
• Manufacturer: Rohm Semiconductor

Specifications of EMX3T2R

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 150mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 150mW
• Frequency - Transition: 180MHz
• Mounting Type: Surface Mount
• Package / Case: EMT6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: EMX3T2RTR

Transistors
Fig.10
Fig.7 Collector-emitter saturation
0.05
0.02
0.01
0.5
0.2
0.1
20
10
5
2
1
0.2
0.2
COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE
voltage vs. collector current ( Ι )
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
0.5 1
COLLECTOR CURRENT : I
0.5
Ta=100°C
−55°C
25°C
1
2
2
5 10
5
20
10
C
Ta=25°C
50 100 200
f = 1MHz
I
I
(mA)
E
C
20
=0A
=0A
I
C
: V
/I
B
CB
=10
EB
(V)
(V)
50
Fig.8 Collector-emitter saturation
0.05
0.02
0.01
Fig.11 Base-collector time constant
200
100
0.5
0.2
0.1
50
20
10
−0.2
0.2
voltage vs. collector current (ΙΙ)
0.5 1
COLLECTOR CURRENT : I
vs. emitter current
EMITTER CURRENT : I
−0.5
Ta=100°C
−55°C
25°C
2
−1
5 10
−2
E
20
C
(mA)
(mA)
I
Ta=25°C
f=32MH
V
C
−5
/I
CB
B
50 100
=6V
=50
−10
Z
EMX3 / UMX3N / IMX3
Fig.9 Gain bandwidth product vs.
500
200
100
50
−0.5 −1
emitter current
EMITTER CURRENT : I
−2
Rev.A
−5
−10 −20
E
(mA)
Ta=25°C
V
CE
−50 −100
=6V
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