IMT4T108 Rohm Semiconductor, IMT4T108 Datasheet

IMT4T108

Manufacturer Part Number

IMT4T108

Description

TRANS DUAL PNP 120V 50MA SOT-457

Manufacturer

Rohm Semiconductor

Datasheet

1.IMT4T108.pdf (3 pages)

Specifications of IMT4T108

Transistor Type

2 PNP (Dual)

Current - Collector (ic) (max)

50mA

Voltage - Collector Emitter Breakdown (max)

120V

Vce Saturation (max) @ Ib, Ic

500mV @ 1mA, 10mA

Dc Current Gain (hfe) (min) @ Ic, Vce

180 @ 2mA, 6V

Power - Max

300mW

Frequency - Transition

140MHz

Mounting Type

Surface Mount

Package / Case

SC-74-6

Module Configuration

Dual

Transistor Polarity

PNP

Collector Emitter Voltage V(br)ceo

120V

Gain Bandwidth Ft Typ

140MHz

Power Dissipation Pd

300mW

Dc Collector Current

-50mA

Operating Temperature

RoHS Compliant

Configuration

Dual

Mounting Style

SMD/SMT

Collector- Emitter Voltage Vceo Max

- 120 V

Emitter- Base Voltage Vebo

- 5 V

Continuous Collector Current

- 50 mA

Maximum Dc Collector Current

0.05 A

Power Dissipation

300 mW

Maximum Operating Frequency

140 MHz

Maximum Operating Temperature

+ 150 C

Dc Collector/base Gain Hfe Min

180

Gain Bandwidth Product Ft

140 MHz

Dc Current Gain Hfe

180

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

IMT4T108TR

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Transistors

General purpose (dual transistors)

IMT4

1) Two 2SA1514K chips in an AMT package.

2) High breakdown voltage.

∗ 200mW per element must not be exceeded.

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Transition frequency

Collector-emitter saturation voltage

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

Junction temperature

Storage temperature

∗Transition frequency of the device.

Features

Package, marking, and Packaging specifications

Equivalent circuit

Absolute maximum ratings (Ta=25°C)

Electrical characteristics (Ta=25°C)

Basic ordering unit (pieces)

IMT4

(3)

(4)

Parameter

Package

Part No.

Marking

(2)

(5)

Code

Parameter

(6)

(1)

Symbol

Tstg

CBO

CEO

EBO

SMT6

IMT4

T108

3000

Symbol

CE(sat)

CBO

EBO

CBO

CEO

EBO

300 (TOTAL)

−55 to +150

Limits

−120

−50

150

−5

−120

Min.

180

−5

−

External dimensions (Unit : mm)

IMT4

Typ.

140

ROHM : SMT6

EIAJ : SC-74

JEDEC : SOT-457

−

Max.

Unit

−0.5

820

°C

−

MHz

Unit

µA

−

0.3Min.

∗

= −50µA

= −1mA

= −50µA

1.6

2.8

= −4V

= −100V

= −6V, I

= −12V, I

= −10mA/−1mA

Each lead has same dimensions

−2mA

= 2mA, f = 100MHz

Rev.A

Conditions

IMT4

1/2

∗

Related parts for IMT4T108

IMT4T108 Summary of contents

Page 1

Transistors General purpose (dual transistors) IMT4 Features 1) Two 2SA1514K chips in an AMT package. 2) High breakdown voltage. Package, marking, and Packaging specifications Part No. Package Marking Code Basic ordering unit (pieces) Equivalent circuit IMT4 (4) (5) (6) Tr ...

Page 2

Transistors Electrical characteristic curves −10 Ta=25°C −8 −6 −4 −5.0 −2 −2.5µ −4 −8 −12 −16 −20 0 COLLECTOR TO EMITTER VOLTAGE : V (V) CE Fig.1 Ground emitter output characteristics Ta=25°C −0.5 −0.2 =50 ...

Page 3

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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