IMT4T108 Rohm Semiconductor, IMT4T108 Datasheet
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IMT4T108
Manufacturer Part Number
IMT4T108
Description
TRANS DUAL PNP 120V 50MA SOT-457
Manufacturer
Rohm Semiconductor
Datasheet
1.IMT4T108.pdf
(3 pages)
Specifications of IMT4T108
Transistor Type
2 PNP (Dual)
Current - Collector (ic) (max)
50mA
Voltage - Collector Emitter Breakdown (max)
120V
Vce Saturation (max) @ Ib, Ic
500mV @ 1mA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
180 @ 2mA, 6V
Power - Max
300mW
Frequency - Transition
140MHz
Mounting Type
Surface Mount
Package / Case
SC-74-6
Module Configuration
Dual
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
120V
Gain Bandwidth Ft Typ
140MHz
Power Dissipation Pd
300mW
Dc Collector Current
-50mA
Operating Temperature
RoHS Compliant
Configuration
Dual
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 120 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 50 mA
Maximum Dc Collector Current
0.05 A
Power Dissipation
300 mW
Maximum Operating Frequency
140 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
180
Gain Bandwidth Product Ft
140 MHz
Dc Current Gain Hfe
180
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
IMT4T108TR
Transistors
General purpose (dual transistors)
IMT4
1) Two 2SA1514K chips in an AMT package.
2) High breakdown voltage.
∗ 200mW per element must not be exceeded.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Collector-emitter saturation voltage
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
∗Transition frequency of the device.
Features
Package, marking, and Packaging specifications
Equivalent circuit
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
Basic ordering unit (pieces)
IMT4
Tr
2
(3)
(4)
Parameter
Package
Part No.
Marking
(2)
(5)
Code
Parameter
(6)
(1)
Tr
1
Symbol
V
V
V
Tstg
Pc
CBO
CEO
EBO
I
Tj
C
SMT6
IMT4
T108
3000
T4
Symbol
V
BV
BV
BV
I
I
CE(sat)
h
CBO
EBO
f
FE
T
CBO
CEO
EBO
300 (TOTAL)
−55 to +150
Limits
−120
−120
−50
150
−5
−120
−120
Min.
180
−5
−
−
−
−
External dimensions (Unit : mm)
IMT4
Typ.
140
ROHM : SMT6
EIAJ : SC-74
JEDEC : SOT-457
−
−
−
−
−
−
−
Max.
Unit
mW
−0.5
−0.5
−0.5
mA
820
°C
°C
V
V
V
−
−
−
−
MHz
Unit
µA
µA
V
V
V
V
−
0.3Min.
∗
I
I
I
V
V
V
V
I
C
C
E
C
CB
EB
CE
CE
= −50µA
= −1mA
= −50µA
/I
1.6
2.8
B
= −4V
= −100V
= −6V, I
= −12V, I
= −10mA/−1mA
Each lead has same dimensions
C
−2mA
E
= 2mA, f = 100MHz
Rev.A
Conditions
IMT4
1/2
∗
Related parts for IMT4T108
IMT4T108 Summary of contents
Page 1
Transistors General purpose (dual transistors) IMT4 Features 1) Two 2SA1514K chips in an AMT package. 2) High breakdown voltage. Package, marking, and Packaging specifications Part No. Package Marking Code Basic ordering unit (pieces) Equivalent circuit IMT4 (4) (5) (6) Tr ...
Page 2
Transistors Electrical characteristic curves −10 Ta=25°C −8 −6 −4 −5.0 −2 −2.5µ −4 −8 −12 −16 −20 0 COLLECTOR TO EMITTER VOLTAGE : V (V) CE Fig.1 Ground emitter output characteristics Ta=25°C −0.5 −0.2 =50 ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...