QSZ2TR Rohm Semiconductor, QSZ2TR Datasheet - Page 3

• Manufacturer Part Number: QSZ2TR
• Description: TRANSISTOR PNP 30V 1.5A TSMT5
• Manufacturer: Rohm Semiconductor

Specifications of QSZ2TR

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 1.5A
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 350mV @ 50mA, 1A / 370mV @ 50mA, 1A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 270 @ 100mA, 2V
• Power - Max: 1.25W
• Frequency - Transition: 300MHz, 280MHz
• Mounting Type: Surface Mount
• Package / Case: TSMT5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

Transistors
Tr1
0.001
Electrical characteristic curves
1000
0.01
100
0.1
10
0.001
Fig.4 Grounded emitter propagation
1000
1
0
100
10
BASE TO EMITTER CURRENT : V
1
0.1
V
Pulsed
CE
EMITTER TO BASE VOLTAGE : V
COLLECTOR TO BASE VOLTAGE : V
Fig.7 Collector output capacitance
=2V
Ta=25°C
COLLECTOR CURRENT : I
Fig.1 DC current gain
characteristics
Ta=100°C
0.01
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Ta=100°C
Ta= −40°C
0.5
vs. collector current
1
0.1
Ta= −40°C
Cib
Ta=25°C
Cob
1
10
1
C
(A)
V
Pulsed
CE
Ta = 25°C
I
f = 1MHz
BE
C
=2V
= 0A
EB
(V)
( V)
CB
10
1.5
( V)
100
0.01
1000
0.1
Fig.2 Collector-emitter saturation voltage
10
0.001
100
10
1
0.01
V
V
BE(sat)
CE(sat)
Fig.5 Gain bandwidth product
base-emitter saturation voltage
vs. collector current
COLLECTOR CURRENT : I
EMITTER CURRENT : I
0.01
vs. emitter current
Ta= −40°C
Ta=100°C
0.1
Ta=25°C
Ta=100°C
0.1
Ta= −40°C
1
Ta=25°C
1
E
I
Pulsed
I
Pulsed
C
(A)
Ta=25°C
V
f=100MHz
C
C
(A)
/I
/I
CE
B
B
=20
=2V
=20/1
10
10
0.01
1000
0.1
Fig.3 Collector-emitter saturation voltage
0.001
100
1
10
0.01
1
Ta=25°C
Pulsed
I
C
vs. collector current
I
/I
C
COLLECTOR CURRENT : I
B
/I
=50/1
COLLECTOR CURRENT : I
B
0.01
=20/1
Fig.6 Switching time
0.1
I
0.1
C
/I
B
=10/1
tstg
1
1
tr
tdon
QSZ2
C
tf
(A)
Ta=25°C
V
f=100MHz
C
CE
(A)
=5V
3/4
10
10