QST9TR Rohm Semiconductor, QST9TR Datasheet - Page 2

• Manufacturer Part Number: QST9TR
• Description: TRANSISTOR PNP 30V 1A TSMT6
• Manufacturer: Rohm Semiconductor

Specifications of QST9TR

• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 350mV @ 25mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 270 @ 100mA, 2V
• Power - Max: 1.25W
• Frequency - Transition: 320MHz
• Mounting Type: Surface Mount
• Package / Case: TSMT6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

Transistors
1000
Type
QST9
0.001
Fig.4 Grounded emitter propagation
Packaging specifications
Electrical characteristic curves
100
0.01
10
0.1
0.001
1
100
0
10
BASE TO EMITTER CURRENT : V
0.1
V
Pulsed
1
CE
characteristics
EMITTER TO BASE VOLTAGE : V
COLLECTOR TO BASE VOLTAGE : V
Fig.7 Collector output capacitance
=−2V
COLLECTOR CURRENT : I
Ta=25°C
Ta=100°C
Fig.1 DC current gain
Cob
0.01
Ta=−40°C
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Package
Code
Basic ordering unit (pieces)
0.5
vs. collector current
Ta=100°C
1
0.1
Cib
Ta=−40°C
Ta=25°C
1
10
1
C
V
Pulsed
(A)
CE
Ta = 25°C
I
f = 1MHz
BE
=−2V
C
= 0A
(V)
EB
10
( V)
1.5
CB
( V)
100
1000
Fig.2 Collector-emitter saturation voltage
Taping
100
3000
0.01
10
0.1
0.01
TR
10
0.001
1
I
Pulsed
base-emitter saturation voltage
vs. collector current
C
V
Fig.5 Gain bandwidth product
/I
V
B
CE(sat)
BE(sat)
=20/1
COLLECTOR CURRENT : I
EMITTER CURRENT : I
Ta=−40°C
Ta=100°C
0.01
Ta=25°C
vs. emitter current
0.1
0.1
Ta=−40°C
Ta=100°C
Ta=25°C
E
Ta=25°C
V
f=100MHz
(A)
CE
C
(A)
=−2V
1
1
Fig.3 Collector-emitter saturation voltage
1000
0.001
100
0.01
10
0.1
0.001
10
0.01
1
1
Ta=25°C
Pulsed
vs. collector current
COLLECTOR CURRENT : I
COLLECTOR CURRENT : I
0.01
Fig.6 Switching time
Rev.A
I
C
/I
B
=50/1
0.1
0.1
I
C
/I
tr
B
=20/1
tstg
tf
QST9
I
C
Ta=25°C
V
I
/I
C
C
C
B
CE
(A)
/I
(A)
=10/1
B
=−5V
=20/1
tdon
2/2
1
1