BC 856S E6327 Infineon Technologies, BC 856S E6327 Datasheet - Page 5
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BC 856S E6327
Manufacturer Part Number
BC 856S E6327
Description
TRANSISTOR PNP AF 65V SOT-363
Manufacturer
Infineon Technologies
Datasheet
1.BC_856S_E6327.pdf
(10 pages)
Specifications of BC 856S E6327
Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
2 PNP (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
65V
Vce Saturation (max) @ Ib, Ic
650mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
250mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
200 at 2 mA at 5 V
Configuration
Dual
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
65 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.1 A
Power Dissipation
250 mW
Maximum Operating Frequency
250 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BC856SE6327XT
SP000012942
SP000012942
DC current gain h
V
h
Base-emitter saturation voltage
I
C
Ι
FE
CE
C
= ƒ(V
10
mA
10
10
10
10
10
10
10
5
5
5
= 5 V
5
5
-1
3
2
1
0
10
2
1
0
0
-2
100
BEsat
25
-50
C
C
C
0.2
5
), h
10
FE
-1
100 C
25
0.4
-50C
FE
= 20
C
C
5
= ƒ(I
10
0.6
0
C
)
0.8
5
10
1
EHP00382
Ι
V
EHP00379
mA
V
C
BEsat
10
1.2
2
5
Ι
Ι
Collector-emitter saturation voltage
I
Collector cutoff current I
V
CB0
C
C
CBO
10
10
= ƒ(V
mA
10
10
10
10
10
10
10
10
nA
5
5
-1
5
5
5
5
-1
1
0
0
2
1
4
3
2
= 30 V
0
0
CEsat
0.1
), h
FE
50
max
= 20
BC856S/U_BC857S
0.2
100
-50
25
CBO
0.3
C
C
C
100
= ƒ(T
2008-01-18
typ
0.4
EHP00380
EHP00381
C
T
V
A
A
CEsat
)
V
150
0.5