UMB2NTN Rohm Semiconductor, UMB2NTN Datasheet
UMB2NTN
Manufacturer Part Number
UMB2NTN
Description
TRANS DUAL PNP 50V 30MA SOT-363
Manufacturer
Rohm Semiconductor
Datasheet
1.UMB2NTN.pdf
(3 pages)
Specifications of UMB2NTN
Transistor Type
2 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
47K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
68 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
250MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Module Configuration
Dual
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
50V
Gain Bandwidth Ft Typ
250MHz
Power Dissipation Pd
150mW
Dc Collector Current
-100mA
Operating Temperature
RoHS Compliant
Dc Current Gain Hfe
68
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
UMB2NTN
UMB2NTNTR
UMT6/SC-88/SOT-363
UMB2NTNTR
UMT6/SC-88/SOT-363
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
UMB2NTN
Manufacturer:
ROHM
Quantity:
60 000
Part Number:
UMB2NTN
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
General purpose
(dual digital transistors)
EMB2 / UMB2N / IMB2A
1) Two DTA144E chips in a EMT or UMT or SMT
2) Same size as EMT3 or UMT3 or SMT3 package, so
3) Transistor elements are independent, eliminating
Epitaxial planar type
PNP silicon transistor (Built-in resistor type)
The following characteristics apply to both DTr
DTr
∗
∗
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
Supply voltage
Input voltage
Output current
Power
dissipation
Junction temperature
Storage temperature
Features
Structure
Equivalent circuit
Absolute maximum ratings (Ta = 25°C)
package.
same mounting machine can be used for both.
interference.
EMB2 / UMB2N
2
.
R
R
1
2
=47kΩ
=47kΩ
Parameter
EMB2, UMB2N
IMB2A
DTr
2
(3)
(4)
R
R
2
1
(2)
(5)
R
R
1
2
DTr
(1)
(6)
1
Symbol
I
C (Max.)
Tstg
V
V
Pd
I
Tj
IMB2A
CC
O
IN
DTr
2
(4)
(3)
R
R
150 (TOTAL)
300 (TOTAL)
2
−55 to +150
1
(5)
R
(2)
Limits
−100
R
−50
−40
−30
1
10
150
2
DTr
(6)
(1)
1
R
R
1
2
=47kΩ
=47kΩ
1
and
Unit
mW
mA
˚C
˚C
V
V
∗ 1
∗ 2
External dimensions (Unit : mm)
EMB2
ROHM : EMT6
UMB2N
ROHM : UMT6
EIAJ : SC-88
IMB2A
ROHM : SMT6
EIAJ : SC-74
0.3to0.6
EMB2 / UMB2N / IMB2A
0.1Min.
Abbreviated symbol : B2
Abbreviated symbol : B2
Abbreviated symbol : B2
( 4 )
( 5 )
( 6 )
1.2
1.6
1.6
2.8
1.25
2.1
( 3 )
( 2 )
( 1 )
Each lead has same dimensions
Each lead has same dimensions
Each lead has same dimensions
Rev.A
1/2
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UMB2NTN Summary of contents
Page 1
Transistors General purpose (dual digital transistors) EMB2 / UMB2N / IMB2A Features 1) Two DTA144E chips in a EMT or UMT or SMT package. 2) Same size as EMT3 or UMT3 or SMT3 package, so same mounting machine can be ...
Page 2
Transistors Electrical characteristics (Ta = 25°C) Parameter Symbol Min. − (off) Input voltage − (on) − Output voltage V O (on) − Input current I I − Output current I O (off) DC current gain G ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...