FMG4AT148 Rohm Semiconductor, FMG4AT148 Datasheet - Page 2
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FMG4AT148
Manufacturer Part Number
FMG4AT148
Description
TRANS DUAL NPN 50V 100MA SMT5
Manufacturer
Rohm Semiconductor
Datasheet
1.UMG4NTR.pdf
(3 pages)
Specifications of FMG4AT148
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 1mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 1mA, 10mA
Frequency - Transition
250MHz
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-74-5, SOT-753
Module Configuration
Dual
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
50V
Gain Bandwidth Ft Typ
250MHz
Power Dissipation Pd
300mW
Dc Collector Current
100mA
Operating Temperature
RoHS Compliant
Dc Current Gain Hfe
250
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Resistor - Emitter Base (r2) (ohms)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FMG4AT148
FMG4AT148TR
FMG4AT148TR
Available stocks
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Part Number
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Transistors
∗Transition frequency of the device.
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Collector-emitter breakdown voltage
Transition frequency
Electrical characteristics (Ta=25 C)
Electrical characteristics curves
500
200
100
50
20
10
1k
Fig.1 DC current gain vs. collector
5
2
1
100μ 200μ
COLLECTOR CURRENT : I
current
500μ 1m
Parameter
2m
Ta=100°C
5m 10m 20m
−40°C
25°C
C
V
(A)
CE
= 5V
50m 100m
Symbol
V
BV
BV
BV
I
I
CE(sat)
h
CBO
EBO
R
f
FE
CBO
CEO
T
EBO
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
1
100μ 200μ
Fig.2 Collector-emitter saturation
COLLECTOR CURRENT : I
Min.
100
voltage vs. collector current
50
50
5
−
−
−
−
7
500μ 1m
Ta=100°C
Typ.
250
250
2m
10
−
−
−
−
−
−
−40°C
25°C
5m 10m 20m
Max.
600
0.5
0.5
0.3
13
−
−
−
−
C
l
C
(A)
/l
B
EMG4 / UMG4N / FMG4A
=10
50m 100m
MHz
Unit
kΩ
μA
μA
V
V
V
V
−
I
I
I
V
V
I
V
V
C
C
E
C
CB
EB
CE
CE
=50μA
=1mA
=50μA
/I
B
=50V
=4V
=5V, I
=10V, I
=10mA/1mA
C
=1mA
E
= −5mA, f=100MHz
Conditions
−
Rev.A
∗
2/2