FMG4AT148 Rohm Semiconductor, FMG4AT148 Datasheet - Page 2

• Manufacturer Part Number: FMG4AT148
• Description: TRANS DUAL NPN 50V 100MA SMT5
• Manufacturer: Rohm Semiconductor

Specifications of FMG4AT148

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 1mA, 10mA
• Frequency - Transition: 250MHz
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-74-5, SOT-753
• Module Configuration: Dual
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 50V
• Gain Bandwidth Ft Typ: 250MHz
• Power Dissipation Pd: 300mW
• Dc Collector Current: 100mA
• Operating Temperature: RoHS Compliant
• Dc Current Gain Hfe: 250
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Resistor - Emitter Base (r2) (ohms): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FMG4AT148; FMG4AT148TR

Transistors
∗Transition frequency of the device.
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Collector-emitter breakdown voltage
Transition frequency
Electrical characteristics (Ta=25 C)
Electrical characteristics curves
500
200
100
50
20
10
1k
Fig.1 DC current gain vs. collector
5
2
1
100μ 200μ
COLLECTOR CURRENT : I
current
500μ 1m
Parameter
2m
Ta=100°C
5m 10m 20m
−40°C
25°C
C
V
(A)
CE
= 5V
50m 100m
Symbol
V
BV
BV
BV
I
I
CE(sat)
h
CBO
EBO
R
f
FE
CBO
CEO
T
EBO
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
1
100μ 200μ
Fig.2 Collector-emitter saturation
COLLECTOR CURRENT : I
Min.
100
voltage vs. collector current
50
50
5
−
−
−
−
7
500μ 1m
Ta=100°C
Typ.
250
250
2m
10
−
−
−
−
−
−
−40°C
25°C
5m 10m 20m
Max.
600
0.5
0.5
0.3
13
−
−
−
−
C
l
C
(A)
/l
B
EMG4 / UMG4N / FMG4A
=10
50m 100m
MHz
Unit
kΩ
μA
μA
V
V
V
V
−
I
I
I
V
V
I
V
V
C
C
E
C
CB
EB
CE
CE
=50μA
=1mA
=50μA
/I
B
=50V
=4V
=5V, I
=10V, I
=10mA/1mA
C
=1mA
E
= −5mA, f=100MHz
Conditions
−
Rev.A
∗
2/2