UMF5NTR Rohm Semiconductor, UMF5NTR Datasheet - Page 3

• Manufacturer Part Number: UMF5NTR
• Description: TRANS DUAL PNP 12V 500MA SOT-363
• Manufacturer: Rohm Semiconductor

Specifications of UMF5NTR

• Transistor Type: 1 NPN Pre-Biased, 1 PNP
• Current - Collector (ic) (max): 100mA, 500mA
• Voltage - Collector Emitter Breakdown (max): 50V, 12V
• Resistor - Base (r1) (ohms): 47K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 68 @ 5mA, 5V / 270 @ 10mA, 2V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 250MHz, 260MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Module Configuration: Dual
• Transistor Polarity: NPN / PNP
• Collector Emitter Voltage V(br)ceo: -12V
• Gain Bandwidth Ft Typ: 260MHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: -500mA
• Operating: RoHS Compliant
• Dc Current Gain Hfe: 270
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Transistors
Tr1
Fig.4 Collector-emitter saturation voltage
Electrical characteristic curves
1000
1000
100
Fig.1 Grounded emitter propagation
100
10
10
1
1000
1
100
0
1
vs. collector current ( ΙΙ )
10
0.1
1
Fig.7 Collector output capacitance
BASE TO EMITTER VOLTAGE : V
V
Pulsed
I
Pulsed
C
CE
characteristics
/I
0.2
EMITTER TO BASE VOLTAGE : V
=2V
B
COLLECTOR CURRENT : I
=20
Emitter input capacitance
vs. emitter-base voltage
vs. collector-base voltage
0.4
10
Ta=25°C
1
0.6
Ta=−40°C
Ta=125°C
0.8
Cib
100
1.0
10
Cob
C
(mA)
1.2
Ta = 25°C
I
f = 1MHz
E
BE
= 0A
(V)
EB
1.4
1000
( V)
100
1000
10000
100
1000
10
Fig.5 Base-emitter saturation voltage
100
1
0.001
10
1
0.01
0.1
10
1
0.01
1
COLLECTOR CURRENT : I
Ta=25°C
Single Pulsed
Fig.2 DC current gain vs.
vs. collector current
COLLECTOR CURRENT : I
Fig.8 Safe operation area
Ta=25°C
EMITTER CURRENT : V
Ta=125°C
Ta=−40°C
collector current
0.1
10
10
Ta=25°C
DC
Ta=125°C
100ms
1
100
Ta=−40°C
100
10ms
C
(mA)
C
10
V
Pulsed
CE
(mA)
1ms
I
Pulsed
C
CE
/I
(V)
=2V
B
=20
1000
1000
100
Fig.3 Collector-emitter saturation voltage
1000
1000
100
100
10
10
1
1
1
vs. collector current ( Ι )
1
Ta=25°C
Pulsed
V
Ta=25°C
Pulsed
I
Fig.6 Gain bandwidth product
C
CE
/I
B
COLLECTOR CURRENT : I
=10
=2V
I
C
/I
EMITTER CURRENT : I
B
I
C
=20
/I
vs. emitter current
B
=50
10
10
Rev.A
100
100
UMF5N
E
C
(mA)
(mA)
3/4
1000
1000