NSBC123JPDXV6T1G ON Semiconductor, NSBC123JPDXV6T1G Datasheet - Page 10
![TRANS BR NPN/PNP DUAL 50V SOT563](/photos/5/30/53073/sot-563-6_463a_sml.jpg)
NSBC123JPDXV6T1G
Manufacturer Part Number
NSBC123JPDXV6T1G
Description
TRANS BR NPN/PNP DUAL 50V SOT563
Manufacturer
ON Semiconductor
Datasheet
1.NSBC124EPDXV6T1G.pdf
(14 pages)
Specifications of NSBC123JPDXV6T1G
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Other names
NSBC123JPDXV6T1GOS
NSBC123JPDXV6T1GOS
NSBC123JPDXV6T1GOSTR
NSBC123JPDXV6T1GOS
NSBC123JPDXV6T1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NSBC123JPDXV6T1G
Manufacturer:
ON
Quantity:
30 000
0.01
0.8
0.6
0.2
0.4
0.1
1
1
0
0
0
I
C
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC144EPDXV6T1 PNP TRANSISTOR
/I
B
= 10
Figure 29. Output Capacitance
10
V
Figure 27. V
R
10
, REVERSE BIAS VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
20
CE(sat)
20
100
0.1
T
10
A
1
= -25°C
0
Figure 31. Input Voltage versus Output Current
30
versus I
75°C
30
10
C
25°C
T
f = 1 MHz
l
T
40
E
A
A
= 0 V
= -25°C
I
= 25°C
C
, COLLECTOR CURRENT (mA)
http://onsemi.com
20
40
50
10
75°C
25°C
0.001
1000
0.01
30
100
100
0.1
10
10
1
0
Figure 30. Output Current versus Input Voltage
1
1
V
O
40
= 0.2 V
2
Figure 28. DC Current Gain
I
C
3
V
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
50
V
4
O
= 5 V
5
10
T
6
A
= 75°C
T
A
7
= 75°C
-25°C
8
25°C
25°C
9
-25°C
100
10