NSBC123JPDXV6T1G ON Semiconductor, NSBC123JPDXV6T1G Datasheet - Page 5
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NSBC123JPDXV6T1G
Manufacturer Part Number
NSBC123JPDXV6T1G
Description
TRANS BR NPN/PNP DUAL 50V SOT563
Manufacturer
ON Semiconductor
Datasheet
1.NSBC124EPDXV6T1G.pdf
(14 pages)
Specifications of NSBC123JPDXV6T1G
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Other names
NSBC123JPDXV6T1GOS
NSBC123JPDXV6T1GOS
NSBC123JPDXV6T1GOSTR
NSBC123JPDXV6T1GOS
NSBC123JPDXV6T1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NSBC123JPDXV6T1G
Manufacturer:
ON
Quantity:
30 000
0.001
4
3
2
1
0
0.01
0
0.1
1
0
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDXV6T1 NPN TRANSISTOR
I
C
/I
B
= 10
10
Figure 4. Output Capacitance
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 2. V
20
I
C
, COLLECTOR CURRENT (mA)
20
CE(sat)
0.1
10
1
0
30
Figure 6. Input Voltage versus Output Current
V
versus I
O
= 0.2 V
T
A
40
10
= -25°C
f = 1 MHz
I
T
C
E
40
A
= 0 V
= 25°C
I
C
75°C
, COLLECTOR CURRENT (mA)
http://onsemi.com
25°C
20
50
50
T
A
= -25°C
5
0.001
1000
75°C
30
0.01
100
100
0.1
10
10
1
1
0
Figure 5. Output Current versus Input Voltage
75°C
1
40
25°C
2
Figure 3. DC Current Gain
25°C
I
T
C
V
A
, COLLECTOR CURRENT (mA)
3
in
= -25°C
, INPUT VOLTAGE (VOLTS)
50
4
10
5
6
7
T
8
V
A
CE
= 75°C
V
O
= 10 V
-25°C
= 5 V
9
25°C
100
10