NSBC123JPDXV6T1G ON Semiconductor, NSBC123JPDXV6T1G Datasheet - Page 13
![TRANS BR NPN/PNP DUAL 50V SOT563](/photos/5/30/53073/sot-563-6_463a_sml.jpg)
NSBC123JPDXV6T1G
Manufacturer Part Number
NSBC123JPDXV6T1G
Description
TRANS BR NPN/PNP DUAL 50V SOT563
Manufacturer
ON Semiconductor
Datasheet
1.NSBC124EPDXV6T1G.pdf
(14 pages)
Specifications of NSBC123JPDXV6T1G
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Other names
NSBC123JPDXV6T1GOS
NSBC123JPDXV6T1GOS
NSBC123JPDXV6T1GOSTR
NSBC123JPDXV6T1GOS
NSBC123JPDXV6T1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NSBC123JPDXV6T1G
Manufacturer:
ON
Quantity:
30 000
1000
1000
100
100
1.0
1.0
Figure 44. DC Current Gain − PNP
Figure 42. DC Current Gain − PNP
I
I
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC143TPDXV6T1
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114TPDXV6T1
10
10
V
CE
= 5.0 V
V
CE
T
T
V
V
= 5.0 V
A
A
CE
CE
= 25°C
= 25°C
= 10 V
= 10 V
http://onsemi.com
100
100
13
1000
1000
100
100
1.0
1.0
Figure 43. DC Current Gain − NPN
Figure 45. DC Current Gain − NPN
I
I
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
10
10
V
V
CE
CE
T
T
V
= 5.0 V
= 5.0 V
A
A
CE
V
= 25°C
= 25°C
CE
= 10 V
= 10 V
100
100