N25Q128A13B1240E NUMONYX, N25Q128A13B1240E Datasheet - Page 111

• Manufacturer Part Number: N25Q128A13B1240E
• Description: SERIAL NOR, 128MB
• Manufacturer: NUMONYX

9.2
S
C
DQ0
DQ1
The Write Volatile Enhanced Configuration register (WRVECR) instruction is entered by
driving Chip Select (S) Low, followed by the instruction code and the data byte on serial data
input (DQ0).
Chip Select (S) must be driven High after the eighth bit of the data byte has been latched in.
If not, the Write Volatile Enhanced Configuration register (WRVECR) instruction is not
executed.
When the new data are latched, the write enable latch (WEL) is reset.
The Write Volatile Enhanced Configuration register (WRVECR) instruction allows the user to
change the values of all the Volatile Enhanced Configuration Register bits, described in
Table 6.: Volatile Enhanced Configuration
The Write Volatile Enhanced Configuration Register impacts the memory behavior right after
the instruction is received by the device.
Figure 41. Write Volatile Enhanced Configuration Register instruction sequence
DIO-SPI Instructions
In DIO-SPI protocol, instructions, addresses and input/Output data always run in parallel on
two wires: DQ0 and DQ1.
In the case of a Dual Command Fast Read (DCFR), Read OTP (ROTP), Read Lock
Registers (RDLR), Read Status Register (RDSR), Read Flag Status Register (RFSR), Read
NV Configuration Register (RDNVCR), Read Volatile Configuration Register (RDVCR),
Read Volatile Enhanced Configuration Register (RDVECR) and Read Identification (RDID)
instruction, the shifted-in instruction sequence is followed by a data-out sequence. Chip
Select (S) can be driven High after any bit of the data-out sequence is being shifted out.
In the case of a Dual Command Page Program (DCPP), Program OTP (POTP), Subsector
Erase (SSE), Sector Erase (SE), Bulk Erase (BE), Program/Erase Suspend (PES),
Program/Erase Resume (PER), Write Status Register (WRSR), Clear Flag Status Register
(CLFSR), Write to Lock Register (WRLR), Write Configuration Register (WRVCR), Write
0
1
High Impedance
2
Instruction
3
4
5
6
7
Register.
MSB
7
8
6
9 10 11 12 13 14 15
5
VECR In
4
3
2
1
0
Write_VECR
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