TC1411CPA Microchip Technology, TC1411CPA Datasheet - Page 3

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TC1411CPA

Manufacturer Part Number
TC1411CPA
Description
MOSFET DRVR 1A 1-OUT Lo Side Inv 8-Pin PDIP Tube
Manufacturer
Microchip Technology
Type
Microcontrollerr
Datasheets

Specifications of TC1411CPA

Package
8PDIP
Driver Configuration
Inverting
Driver Type
Low Side
Peak Output Current
1(Typ) A
Input Logic Compatibility
CMOS|TTL
Number Of Outputs
1
Output Resistance
8 Ohm
Maximum Rise Time
35 ns
Maximum Power Dissipation
730 mW
Maximum Supply Current
0.5(Typ) mA
Operating Temperature
0 to 70 °C
Configuration
Low-Side
Input Type
Inverting
Delay Time
30ns
Current - Peak
1A
Number Of Configurations
1
Voltage - Supply
4.5 V ~ 16 V
Mounting Type
Through Hole
Package / Case
8-DIP (0.300", 7.62mm)
Rise Time
35 ns
Fall Time
35 ns
Supply Voltage (min)
4.5 V
Supply Current
1 mA
Maximum Operating Temperature
+ 70 C
Mounting Style
Through Hole
Minimum Operating Temperature
0 C
Number Of Drivers
1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
High Side Voltage - Max (bootstrap)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TC1411CPA
Manufacturer:
TELCOM
Quantity:
20 000
1.0
Absolute Maximum Ratings †
Supply Voltage ..................................................... +20V
Input Voltage ...................... V
Power Dissipation (T
Storage Temperature Range .............. -65°C to +150°C
Maximum Junction Temperature ...................... +150°C
DC CHARACTERISTICS
© 2006 Microchip Technology Inc.
Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V ≤ V
Typical values are measured at T
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Output
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
Switching Time (Note 1)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
Power Supply Current
Note 1:
MSOP .......................................................... 340 mW
PDIP ............................................................ 730 mW
SOIC............................................................ 470 mW
ELECTRICAL
CHARACTERISTICS
Parameters
Switching times ensured by design.
A
≤ 70°C)
DD
+ 0.3V to GND – 5.0V
A
Sym
I
V
V
V
REV
V
R
I
t
t
= +25°C, V
I
t
PK
t
D1
D2
I
IN
OH
OL
R
F
S
IH
IL
O
V
DD
DD
Min
-1.0
2.0
-10
– 0.025
= 16V.
Typ
1.0
0.5
0.5
0.1
10
10
25
27
29
25
27
29
30
33
35
30
33
35
8
† Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
0.025
Max
0.15
0.8
1.0
1.0
10
14
14
35
40
40
35
40
40
40
45
45
40
45
45
11
TC1411/TC1411N
Units
mA
µA
ns
ns
ns
ns
Ω
V
V
V
V
A
A
0V ≤ V
-40°C ≤ T
DC Test
DC Test
V
0°C ≤ T
-40°C ≤ T
V
Duty cycle ≤ 2%, t ≤ 300 µs,
V
T
0°C ≤ T
-40°C ≤ T
T
0°C ≤ T
-40°C ≤ T
T
0°C ≤ T
-40°C ≤ T
T
0°C ≤ T
-40°C ≤ T
V
V
A
A
A
A
DD
DD
DD
IN
IN
= +25°C
= +25°C
= +25°C,
= +25°C
= 3V, V
= 0V
= 16V, I
= 16V
= 16V
IN
A
A
A
A
A
≤ V
A
A
A
A
A
A
≤ +70°C
≤ +70°C
≤ +70°C
≤ +70°C
≤ +70°C
DD
Conditions
DD,
≤ +85°C
O
≤ +85°C
≤ +85°C, Figure 4-1
≤ +85°C, Figure 4-1
≤ +85°C, Figure 4-1
≤ +85°C, Figure 4-1
= 10 mA, T
= 16V
T
A
= +25°C
DD
DS21390D-page 3
≤ 16V.
A
= +25°C

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