UMA3NTR Rohm Semiconductor, UMA3NTR Datasheet - Page 2

• Manufacturer Part Number: UMA3NTR
• Description: TRANS DUAL PNP 50V 100MA SOT-353
• Manufacturer: Rohm Semiconductor

Specifications of UMA3NTR

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Resistor - Emitter Base (r2) (ohms): -

Tr
∗
Type
EMA3
UMA3N
FMA3A
∗
∗
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
DC current transfer ratio
Emitter cutoff current
Collector-emitter saturation voltage
Transition frequency
Input resistance
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
Packaging specifications
Electrical characteristic curves
Transition frequency of the device
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
500
200
100
ansistors
50
20
10
1k
Fig.1 DC current gain vs. collector
−100µ
5
2
1
−200µ
COLLECTOR CURRENT : I
current
Parameter
−500µ
Parameter
Ta=100˚C
Package
Code
Basic ordering
unit (pieces)
−1m
−40˚C
25˚C
−2m
EMA3, UMA3N
FMA3A
−5m
−10m
−20m
C
V
(A)
CE
=−5V
−50m −100m
8000
T2R
Symbol
BV
BV
V
BV
I
I
h
CE (sat)
Symbol
CBO
EBO
R
FE
f
CBO
CEO
EBO
V
V
V
Tstg
T
1
P
Tj
CBO
CEO
EBO
I
C
C
Taping
3000
TR
Min.
3.29
−50
−50
100
−5
−
−
−
−
−500m
−200m
−100m
−50m
−20m
−10m
−5m
−2m
−1m
−100µ
−1
150 (TOTAL)
300 (TOTAL)
Fig.2 Collector-emitter saturation
−55 to +150
Typ.
−200µ
250
250
T148
3000
Limits
4.7
−100
−50
−50
150
−
−
−
−
−
−
−5
COLLECTOR CURRENT : I
voltage vs. collector current
−500µ
Max.
−0.5
−0.5
−0.3
6.11
600
Ta=100˚C
−1m
−
−
−
−
−40˚C
25˚C
−2m
−5m
Unit
MHz
µA
µA
kΩ
V
V
V
V
mW
−
Unit
mA
˚C
˚C
V
V
V
−10m
−20m
C
I
I
I
V
V
V
I
V
l
∗
C
C
E
C
∗
C
(A)
CB
CE
EB
= −50µA
= −1mA
= −50µA
/I
/l
CE
1
2
B
−50m−100m
B
=20
= −4V
= −50V
/I
= −5mA/−0.25mA
= −10V, I
C
= −5V/−1mA
EMA3 / UMA3N / FMA3A
E
= 5mA, f = 100MHz
Conditions
−
Rev.A
∗
2/2