UMB3NTN Rohm Semiconductor, UMB3NTN Datasheet

UMB3NTN

Manufacturer Part Number

UMB3NTN

Description

TRANS DUAL PNP 50V 100MA SOT-363

Manufacturer

Rohm Semiconductor

Datasheet

1.UMB3NTN.pdf (3 pages)

Specifications of UMB3NTN

Transistor Type

2 PNP - Pre-Biased (Dual)

Current - Collector (ic) (max)

100mA

Voltage - Collector Emitter Breakdown (max)

50V

Resistor - Base (r1) (ohms)

4.7K

Dc Current Gain (hfe) (min) @ Ic, Vce

100 @ 1mA, 5V

Vce Saturation (max) @ Ib, Ic

300mV @ 2.5mA, 5mA

Frequency - Transition

250MHz

Power - Max

150mW

Mounting Type

Surface Mount

Package / Case

SC-70-6, SC-88, SOT-363

Module Configuration

Dual

Transistor Polarity

PNP

Collector Emitter Voltage V(br)ceo

50V

Gain Bandwidth Ft Typ

250MHz

Power Dissipation Pd

150mW

Dc Collector Current

-100mA

Operating Temperature

RoHS Compliant

Dc Current Gain Hfe

250

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Resistor - Emitter Base (r2) (ohms)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

UMB3NTN

Manufacturer:

ALLEGRO

Quantity:

1 368

Company:

Meier Automation Equipment Co., Limited

Part Number:

UMB3NTN

Manufacturer:

ROHM/罗姆

Quantity:

20 000

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Transistors

General purpose (dual digital transistors)

EMB3 / UMB3N / IMB3A

1) Two DTA143T chips in a EMT6 or UMT6 or SMT6

2) Mounting possible with EMT3 or UMT3 or SMT3

3) Transistor elements are independent, eliminating

Dual PNP digital transistor

(each with single built in resistor)

The following characteristics apply to both DTr

Type

EMB3

UMB3N

IMB3N

Features

Structure

Equivalent circuit

Packaging specifications

package.

automatic mounting machines.

interference.

DTr

EMB3, UMB3N

(3)

(4)

=4.7kΩ

Package

Code

Basic ordering unit (pieces)

(5)

(2)

DTr

(6)

(1)

DTr

(3)

IMB3A

(4)

=4.7kΩ

(5)

(2)

DTr

(6)

(1)

8000

T2R

−

Taping

3000

and DTr

−

T110

3000

−

External dimensions (Unit : mm)

EMB3

ROHM : EMT6

UMB3N

ROHM : UMT6

EIAJ : SC-88

IMB3A

ROHM : SMT6

EIAJ : SC-74

1pin mark

EMB3 / UMB3N / IMB3A

0.65

( 1 )

( 6 )

( 1 ) ( 2 )

0.95

( 4 )

( 3 )

0.3

2.9

( 6 )

1.9

0.5

0.22

2.0

1.3

0.2

1.6

( 5 )

1.0

( 2 )

Each lead has same dimensions

Abbreviated symbol : B3

Each lead has same dimensions

Abbreviated symbol : B3

0.95

Each lead has same dimensions

Abbreviated symbol : B3

( 5 )

( 2 )

0.5

( 5 )

( 3 )

( 4 )

0.65

( 4 )

( 3 )

( 1 )

( 6 )

0.13

0.5

0.15

1.1

Rev.B

0.9

0.8

0.7

1/2

Related parts for UMB3NTN

UMB3NTN Summary of contents

Page 1

Transistors General purpose (dual digital transistors) EMB3 / UMB3N / IMB3A Features 1) Two DTA143T chips in a EMT6 or UMT6 or SMT6 package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are ...

Page 2

Transistors Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current EMB3,UMB3N Collector power dissipation IMB3A Junction temperature Storage temperature ∗ 1 120mW per element must not be exceeded. ∗ 2 200mW per element must ...

Page 3

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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