IMD2AT108 Rohm Semiconductor, IMD2AT108 Datasheet
IMD2AT108
Manufacturer Part Number
IMD2AT108
Description
TRANS NPN/PNP 50V 30MA SOT-457
Manufacturer
Rohm Semiconductor
Datasheet
1.UMD2NTR.pdf
(4 pages)
Specifications of IMD2AT108
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
22K
Resistor - Emitter Base (r2) (ohms)
22K
Dc Current Gain (hfe) (min) @ Ic, Vce
56 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
250MHz
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-74-6
Module Configuration
Dual
Transistor Polarity
NPN / PNP
Collector Emitter Voltage V(br)ceo
50V
Gain Bandwidth Ft Typ
250MHz
Power Dissipation Pd
300mW
Dc Collector Current
100mA
Operating
RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IMD2AT108
IMD2AT108TR
IMD2AT108TR
Available stocks
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Price
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Part Number:
IMD2AT108
Manufacturer:
ROHM
Quantity:
452 700
Company:
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IMD2AT108
Manufacturer:
ROHM
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1 200
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Part Number:
IMD2AT108
Manufacturer:
ROHM10
Quantity:
390
Transistors
General purpose
(dual digital transistors)
EMD2 / UMD2N / IMD2A
1) Both the DTA124E chip and DTC124E chip in a EMT
2) Mounting possible with EMT6 or UMT6 or SMT6
3) Transistor elements are independent, eliminating
4) Mounting cost and area can be cut in half.
Epitaxial planar type
NPN / PNP silicon transistor (Built-in resistor type)
The following characteristics apply to both the DTr
∗
∗
DTr
type have been omitted.
Supply voltage
Input voltage
Output current
Power
dissipation
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
Features
Structure
Equivalent circuit
Absolute maximum ratings (Ta = 25°C)
or UMT or SMT package.
automatic mounting machines.
interference.
EMD2 / UMD2N
2
R
R
, however, the “−” sign on DTr
1
2
=22kΩ
=22kΩ
Parameter
EMD2, UMD2N
IMD2A
DTr
2
(3)
(4)
R
R
2
1
(2)
(5)
R
R
1
2
DTr
(1)
(6)
1
Symbol
I
C (Max.)
Tstg
V
V
Pd
Tj
I
CC
O
IMD2A
IN
DTr
2
(4)
(3)
R
150 (TOTAL)
300 (TOTAL)
R
−55 to +150
2
2
1
values for the PNP
(5)
R
(2)
Limits
R
1
−10
100
150
50
40
30
2
DTr
(6)
(1)
1
R
R
1
2
=22kΩ
=22kΩ
Unit
mW
mA
˚C
˚C
1
V
V
and
∗
∗
1
2
Dimensions (Unit : mm)
EMD2
ROHM : EMT6
UMD2N
ROHM : UMT6
EIAJ : SC-88
ROHM : SMT6
EIAJ : SC-74
IMD2A
(4)
(3)
(6) (5) (4)
(1) (2) (3)
EMD2 / UMD2N / IMD2A
(6) (5) (4)
(1) (2) (3)
(5)
(2)
Abbreviated symbol : D2
Abbreviated symbol : D2
Abbreviated symbol : D2
(6)
(1)
Each lead has same dimensions
Each lead has same dimensions
Each lead has same dimensions
Rev.C
1/3
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IMD2AT108 Summary of contents
Page 1
Transistors General purpose (dual digital transistors) EMD2 / UMD2N / IMD2A Features 1) Both the DTA124E chip and DTC124E chip in a EMT or UMT or SMT package. 2) Mounting possible with EMT6 or UMT6 or SMT6 automatic mounting machines. ...
Page 2
Transistors Electrical characteristics (Ta = 25°C) Parameter Symbol V I (off) Input voltage V I (on) Output voltage V O (on) Input current I Output current I O (off) DC current gain G Transition frequency f T Input resistance R ...
Page 3
Transistors = 500m 200m Ta=100˚C 100m 25˚C −40˚C 50m 20m 10m 100µ 200µ 500µ 10m 20m 50m 100m OUTPUT CURRENT : I (A) O Fig.4 Output voltage vs. output ...
Page 4
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...