UMH8NTR Rohm Semiconductor, UMH8NTR Datasheet
UMH8NTR
Manufacturer Part Number
UMH8NTR
Description
TRANS DUAL NPN 50V 100MA SOT-363
Manufacturer
Rohm Semiconductor
Datasheet
1.IMH8AT108.pdf
(3 pages)
Specifications of UMH8NTR
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 1mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 1mA, 10mA
Frequency - Transition
250MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Resistor - Emitter Base (r2) (ohms)
-
Transistors
General purpose (dual digital transistors)
UMH8N / IMH8A
1) Two DTC114T chips in a EMT or UMT or SMT
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
∗Transition frequency of the device.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Collector-emitter breakdown voltage
Transition frequency
Features
Equivalent circuits
Package, marking, and packaging specifications
Absolute maximum ratings (Ta=25 C)
Electrical characteristics (Ta=25 C)
Basic ordering unit (pieces)
package.
(3)
UMH8N
R
1
R
(4) (5)
(2)
1
=10kΩ
Package
Marking
Code
Type
R
1
Parameter
(1)
(6)
Parameter
(4)
IMH8A
R
1
R
UMH8N
IMH8A
UMH8N
(3) (2)
(5)
1
UMT6
=10kΩ
3000
TR
H8
R
1
(6)
(1)
Symbol
V
V
V
Tstg
IMH8A
SMT6
Pd
Tj
CBO
CEO
EBO
I
T108
3000
C
H8
Symbol
V
BV
BV
BV
I
I
CE(sat)
h
CBO
EBO
R
f
FE
CBO
CEO
T
150(TOTAL)
300(TOTAL)
EBO
−55 to +150
1
Limits
100
150
50
50
5
Min.
100
50
50
5
−
−
−
−
7
Unit
mW
mA
°C
°C
V
V
V
∗1
∗2
Typ.
250
250
10
−
−
−
−
−
−
External dimensions (Unit : mm)
UMH8N
ROHM : UMT6
EIAJ : SC-88
IMH8A
ROHM : SMT6
EIAJ : SC-74
Max.
600
0.5
0.5
0.3
13
−
−
−
−
MHz
Unit
kΩ
μA
μA
V
V
V
V
−
0.3Min.
0.1Min.
I
I
I
V
V
I
V
V
C
C
E
C
CB
EB
CE
CE
=50μA
=1mA
=50μA
/I
B
1.6
2.8
=50V
=4V
=5V, I
=10V, I
=10mA/1mA
1.25
2.1
UMH8N / IMH8A
C
Each lead has same dimensions
Each lead has same dimensions
=1mA
E
= −5mA, f=100MHz
Conditions
−
Rev.A
∗
1/2
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UMH8NTR Summary of contents
Page 1
Transistors General purpose (dual digital transistors) UMH8N / IMH8A Features 1) Two DTC114T chips in a EMT or UMT or SMT package. Equivalent circuits UMH8N IMH8A (3) (2) (1) (4) (5) ( ...
Page 2
Transistors Electrical characteristics curves 500 200 Ta=100°C 100 25°C −40° 100μ 200μ 500μ 10m 20m 50m 100m (A) COLLECTOR CURRENT : I C Fig.1 DC current ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...