IMB7AT108 Rohm Semiconductor, IMB7AT108 Datasheet - Page 2

• Manufacturer Part Number: IMB7AT108
• Description: TRANS PNP DUAL DTA143T SOT-457
• Manufacturer: Rohm Semiconductor

Specifications of IMB7AT108

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SOT-457
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Resistor - Emitter Base (r2) (ohms): -

Transistors
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Input resistance
Electrical characteristics (Ta=25°C)
Parameter
Symbol
V
BV
BV
BV
I
I
CE(sat)
CBO
EBO
h
R
CBO
CEO
EBO
FE
1
3.29
100
Min.
50
50
5
Typ.
250
4.7
6.11
Max.
600
0.5
0.5
0.3
Unit
k
V
V
V
V
A
A
V
I
I
I
V
V
I
C
C
E
C
CE
CB
EB
/I
B
/I
50 A
50 A
1mA
C
50V
4V
5mA / 0.25mA
5V/ 1mA
Conditions
Rev.A
IMB7A
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