SST2222AT116 Rohm Semiconductor, SST2222AT116 Datasheet

TRANSISTOR NPN 40V 0.6A SOT-23

SST2222AT116

Manufacturer Part Number
SST2222AT116
Description
TRANSISTOR NPN 40V 0.6A SOT-23
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of SST2222AT116

Transistor Type
NPN
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
1V @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
350mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
40V
Power Dissipation Pd
200mW
Dc Collector Current
150mA
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOT-23
No. Of Pins
3
Configuration
Single
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.6 A
Maximum Dc Collector Current
0.6 A
Power Dissipation
0.35 W
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
35
Gain Bandwidth Product Ft
300 MHz
Dc Current Gain Hfe
100
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
SST2222AT116TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SST2222AT116
Manufacturer:
ROHM
Quantity:
10 242
Part Number:
SST2222AT116
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
NPN Medium Power Transistor (Switching)
UMT2222A / SST2222A / MMST2222A
1) BV
2) Complements the UMT2907A / SST2907A
Collector power
dissipation
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
When mounted on a 7 x 5 x 0.6 mm ceramic board
Features
Package, marking, and packaging specifications
Electrical characteristics (Ta = 25°C)
Absolute maximum ratings (Ta = 25°C)
Transition frequency
Output capacitance
Emitter input capacitance
Delay time
Rise time
Storage time
Fall time
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Basic ordering unit
Packaging type
/ MMST2907A.
Part No.
Marking
(pieces)
CEO
Code
> 40V (I
Parameter
Parameter
UMT2222A,SST2222A,
MMST2222A
SST2222A
UMT2222A
C
UMT3
T106
3000
=10mA)
R1P
SST2222A
SST3
T116
3000
R1P
Symbol
MMST2222A
V
V
V
Symbol
Tstg
V
V
BV
BV
BV
P
CBO
CEO
EBO
I
Tj
I
I
SMT3
CE(sat)
BE(sat)
Cob
C
tstg
T146
3000
CBO
EBO
Cib
C
h
R1P
f
td
tr
T
tf
CBO
CEO
EBO
FE
−55 to +150
Limits
0.35
150
0.6
0.2
75
40
6
Min.
300
100
0.6
75
40
35
50
75
50
40
6
Typ.
Unit
°C
°C
W
W
V
V
V
A
Max.
225
100
100
300
0.3
1.2
UMT2222A / SST2222A / MMST2222A
25
10
25
60
8
1
2
MHz
Unit
pF
pF
nA
nA
ns
ns
ns
ns
V
V
V
V
V
Dimensions (Unit : mm)
UMT2222A
ROHM : UMT3
EIAJ : SC-70
SST2222A
ROHM : SST3
MMST2222A
ROHM : SMT3
EIAJ : SC-59
I
I
I
V
V
I
I
I
I
V
V
V
V
V
V
V
V
V
V
V
V
V
C
C
E
C
C
C
C
CB
EB
CE
CE
CE
CE
CE
CE
CE
CB
EB
CC
CC
CC
CC
/I
/I
/I
/I
=10µA
=10µA
=10mA
B
B
B
B
= 60V
= 3V
=10V , I
=10V , I
=10V , I
=1V , I
=10V , I
=10V , I
=20V , I
=10V , f =100kHz
=0.5V , f =100kHz
=30V , V
=30V , V
=30V , I
=30V , I
=150mA/15mA
=500mA/50mA
=150mA/15mA
=500mA/50mA
C
C
C
C
C
C
C
=150mA
C
C
BE(OFF)
BE(OFF)
=0.1mA
=1mA
=10mA
=150mA
=500mA
=−20mA, f =100MHz
=150mA , I
=150mA , I
=0.5V , I
=0.5V , I
B1
B1
Conditions
=−I
=−I
C
C
=150mA , I
=150mA , I
B2
B2
=15mA
=15mA
B1
B1
=15mA
=15mA
Rev.A
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
1/3

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SST2222AT116 Summary of contents

Page 1

Transistors NPN Medium Power Transistor (Switching) UMT2222A / SST2222A / MMST2222A Features > 40V (I =10mA CEO C 2) Complements the UMT2907A / SST2907A / MMST2907A. Package, marking, and packaging specifications Part No. UMT2222A SST2222A MMST2222A Packaging type ...

Page 2

Transistors Electrical characteristic curves 100 600 Ta=25°C 500 400 50 300 200 100 I =0µ COLLECTOR-EMITTER VOLTAGE : V (V) CE Fig.1 Grounded emitter output characteristics Ta=25°C = 0.3 0.2 ...

Page 3

Transistors Ta =25°C 1.8 = 10V V CE 1.6 1.2 0.8 0 100 1000 COLLECTOR CURRENT : Ic(mA) Fig.7 Grounded emitter propagation characteristics 1000 Ta =25°C = 30V 10I = 10I ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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