MMST3906T146 Rohm Semiconductor, MMST3906T146 Datasheet
MMST3906T146
Manufacturer Part Number
MMST3906T146
Description
TRANS GP PNP 40V 200MA SOT-346
Manufacturer
Rohm Semiconductor
Datasheet
1.MMST3906T146.pdf
(5 pages)
Specifications of MMST3906T146
Transistor Type
PNP
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA
Current - Collector Cutoff (max)
50nA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
300mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 40 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 0.2 A
Maximum Dc Collector Current
0.2 A
Power Dissipation
6.2 W
Maximum Operating Frequency
250 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
30
Gain Bandwidth Product Ft
250 MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMST3906T146TR
Transistors
PNP General Purpose Transistor
UMT3906 / SST3906 / MMST3906
1) BV
2) Complements the T3904/SST3904/MMST3909.
3) Low capacitance.
∗
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power
dissipation
Junction temperature
Storage temperature
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Collector output capacitance
Emitter input capacitance
Delay time
Rise time
Storage tiem
Fall time
When mounted on a 7 5 0.6mm ceramic board.
Basic ordering unit (pieces)
Features
Package, marking, and packaging specifications
Electrical characteristics (Ta=25°C)
Absolute maximum ratings (Ta=25°C)
CEO
Packaging type
Marking
>
Code
Type
−40V (I
Parameter
Parameter
UMT3906
SST3906,MMST3906
SST3906,MMST3906
C
= −1mA)
UMT3906
UMT3
T106
3000
R2A
Symbol
V
V
V
SST3906
Tstg
Symbol
Pd
V
V
CBO
CEO
EBO
I
Tj
BV
BV
BV
SST3
O
T116
3000
Cob
R2A
I
CE(sat)
BE(sat)
tstg
I
h
Cib
CES
EBO
td
f
tr
tf
FE
CBO
CEO
T
EBO
−55 to +150
MMST3906
−0.65
Limits
Min.
−40
−40
100
250
0.35
150
−40
−40
−0.2
60
80
60
30
−5
6.2
−5
−
−
−
−
−
−
−
−
−
−
−
SMT3
T146
3000
R2A
Typ.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Unit
°C
°C
W
W
V
V
V
A
−0.25
−0.85
−0.95
Max.
−0.4
−50
−50
300
225
4.5
10
35
35
75
−
−
−
−
−
−
−
−
∗
UMT3906/SST3906/MMST3906
MHz
Unit
nA
nA
pF
pF
ns
ns
ns
ns
V
V
V
V
V
−
Dimensions (Unit : mm)
UMT3906
ROHM : UMT3
EIAJ : SC-70
ROHM : SST3
MMST3906
ROHM : SMT3
EIAJ : SC-59
SST3906
I
I
I
V
V
I
I
I
I
V
V
V
V
V
V
V
V
V
V
V
V
C
C
E
C
C
C
C
= −10µA
CB
EB
CE
CE
CE
CE
CE
CE
CB
CB
CC
CC
CC
CC
= −10µA
= −1mA
/I
/I
/I
/I
B
B
B
B
= −3V
= −30V
= −1V, I
= −1V, I
= −1V, I
= −1V, I
= −1V, I
= −20V, I
= −10V, f=100kHz, I
= −0.5V, f=100kHz, I
= −3V, V
= −3V, V
= −3V, I
= −3V, I
= −10mA/ −1mA
= −50mA/ −5mA
= −10mA/ −1mA
= −50mA/ −5mA
C
C
C
C
C
C
C
BE(OFF)
BE(OFF)
= −0.1mA
= −1mA
= −10mA
= −50mA
= −100mA
= −10mA, I
= −10mA, I
E
=10mA, f=100MHz
= −0.5V,I
= −0.5V,I
Conditions
B1
B1
E
C
=0A
= −I
= −I
=0A
C
C
= −10mA, I
= −10mA, I
B2
B2
= −1mA
= −1mA
Rev.B
B1
B1
= −1mA
= −1mA
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
1/4
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MMST3906T146 Summary of contents
Page 1
Transistors PNP General Purpose Transistor UMT3906 / SST3906 / MMST3906 Features −40V (I = −1mA) > CEO C 2) Complements the T3904/SST3904/MMST3909. 3) Low capacitance. Package, marking, and packaging specifications Type UMT3906 SST3906 Packaging type UMT3 Marking R2A ...
Page 2
Transistors Electrical characteristics curves 10 Ta=25 ° =0µ -COLLECTOR-EMITTER VOLTAGE ( CE Fig.1 Grounded emitter output characteristics 500 ...
Page 3
Transistors 500 100 10 5 0.01 0.1 1.0 I -COLLECTOR CURRENT ( C Fig.5 AC current gain vs. collector current 1.8 V =5V CE Ta=25 °C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 1.0 10 100 mA) ...
Page 4
Transistors 100 Ta=25°C 200MHz 100MHz 300MHz 400MHz 10 300MHz 1.0 200MHz 100MHz 0.1 0 100 mA) I -COLLECTOR CURRENT ( C Fig.13 Gain bandwidth product 100 1k f-FREQUENCY ( Fig.16 ...
Page 5
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...