2SD2114KT146V Rohm Semiconductor, 2SD2114KT146V Datasheet
Home Discrete Semiconductor Products Transistors (BJT) - Single 2SD2114KT146V
Manufacturer Part Number
2SD2114KT146V
Description
TRANS NPN 20V 0.5A SOT-346
Manufacturer
Rohm Semiconductor
Specifications of 2SD2114KT146V
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
20V
Vce Saturation (max) @ Ib, Ic
400mV @ 20mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
820 @ 10mA, 3V
Power - Max
200mW
Frequency - Transition
350MHz
Mounting Type
Surface Mount
Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Npn
Transistor Polarity
Collector Emitter Voltage V(br)ceo
20V
Power Dissipation Pd
200mW
Dc Collector Current
500mA
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOT-346
No. Of Pins
3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
20 V
Emitter- Base Voltage Vebo
12 V
Continuous Collector Current
0.5 A
Maximum Dc Collector Current
1 A
Power Dissipation
0.2 W
Maximum Operating Frequency
350 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
820
Gain Bandwidth Product Ft
350 MHz
Dc Current Gain Hfe
820
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SD2114KT146V
Available stocks
Part Number:
2SD2114KT146V
Part Number:
2SD2114KT146V
Part Number:
2SD2114KT146V
Part Number:
2SD2114KT146V
Part Number:
2SD2114KT146V
Part Number:
2SD2114KT146V
Part Number:
2SD2114KT146V
Transistors
High-current Gain Medium
Power Transistor (20V, 0.5A)
2SD2114K / 2SD2144S
1) High DC current gain.
2) High emitter-base voltage.
3) Low V
Epitaxial planar type
NPN silicon transistor
∗
Features
Structure
Absolute maximum ratings (Ta=25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Single pulse Pw=100ms
(I
h
V
V
C
FE
EBO
CE (sat)
/ I
= 1200 (Typ.)
B
CE (sat).
=12V (Min.)
= 500mA / 20mA)
Parameter
= 0.18V (Typ.)
2SD2114K
2SD2144S
Symbol
V
V
V
Tstg
P
Tj
CBO
CEO
EBO
I
C
C
−55 to +150
Limits
150
0.5
0.2
0.3
25
20
12
1
∗
A(Pulse)
2SD2114K
2SD2144S
External dimensions (Unit : mm)
ROHM : SMT3
EIAJ : SC-59
ROHM : SPT
EIAJ : SC-72
Denotes h
A(DC)
Unit
°C
°C
W
V
V
V
FE
∗
(1)
0.95 0.95
2.9±0.2
1.9±0.2
All terminals have same dimensions
2SD2114K / 2SD2144S
5
(1) (2) (3)
(2)
(3)
0.4
4
±
0.2
+0.1
−0.05
Abbreviated symbol: BB
2.5
0.45
+
−
0.4
0.1
+
−
0.15
0.05
0.15
0.5
+0.1
−0.06
2
1.1
∗
±
0.8±0.1
0.2
+0.2
−0.1
0.45
Rev.B
+
−
0∼0.1
0.15
0.05
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Collector
(3) Base
1/4
Related parts for 2SD2114KT146V
2SD2114KT146V Summary of contents
Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S Features 1) High DC current gain 1200 (Typ High emitter-base voltage. V =12V (Min.) EBO 3) Low V CE (sat 0.18V (Typ.) CE ...
Transistors Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Output On-resistance ∗ Measured using pulse current Packaging specifications ...
Transistors 10000 Ta = 25°C Measured using 5000 pulse current. = 2000 1000 500 3V 1V 200 100 100 200 500 1000 (mA) COLLECTOR CURRENT : I C Fig.4 ...
Transistors Ron measurement circuit =1kΩ Input 1kHz 100mV(rms ×R Ron i− 0 Output 2SD2114K / 2SD2144S Rev.B 4/4 ...
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...
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