2SC5662T2LP Rohm Semiconductor, 2SC5662T2LP Datasheet

TRANS NPN 11V 50MA VMT3

2SC5662T2LP

Manufacturer Part Number
2SC5662T2LP
Description
TRANS NPN 11V 50MA VMT3
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of 2SC5662T2LP

Transistor Type
NPN
Current - Collector (ic) (max)
50mA
Voltage - Collector Emitter Breakdown (max)
11V
Vce Saturation (max) @ Ib, Ic
500mV @ 5mA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
82 @ 5mA, 10V
Power - Max
150mW
Frequency - Transition
3.2GHz
Mounting Type
Surface Mount
Package / Case
VMT3
Npn
Transistor Polarity
Collector Emitter Voltage V(br)ceo
11V
Power Dissipation Pd
150mW
Dc Collector Current
10mA
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
VMT
No. Of Pins
3
Transistor Polarity
NPN
Dc Current Gain Hfe
56
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
2SC5662T2LPTR

Available stocks

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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SC5662T2LP
Quantity:
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Company:
Part Number:
2SC5662T2LP
Quantity:
5 885
Company:
Part Number:
2SC5662T2LP
Quantity:
5 895
High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz)
Features
1) High transition frequency. (Typ. f
2) Small rbb’Cc and high gain. (Typ. 4ps)
3) Small NF.
Packaging specifications and h
Absolute maximum ratings (Ta=25C)
Absolute maximum ratings (Ta=25C)
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
Collector-base time constant
Noise factor
c
www.rohm.com
Basic ordering unit
2SC5662 / 2SC4726 /2SC4083 / 2SC3838K
2010 ROHM Co., Ltd. All rights reserved.
Package
Marking
(pieces)
Type
Code
h
FE
Parameter
2SC5662, 2SC4726,
2SC4083, 2SC3838K
Parameter
2SC5662, 2SC4726
2SC4083, 2SC3838K
2SC5662
VMT3
8000
T2L
NP
AD
2SC4726
EMT3
3000
Symbol
V
NP
AD
BV
BV
BV
r
TL
T
bb'
I
Cob
FE
I
CE(sat)
h
NF
CBO
EBO
= 3.2GHz)
f
FE
⋅ Cc
CBO
CEO
EBO
T
Symbol
V
V
V
Tstg
P
Tj
CBO
CEO
EBO
I
C
C
2SC4083
Min.
UMT3
1.4
T106
3000
20
11
56
3
NP
1D
−55 to +150
Limits
Typ.
3.2
0.8
3.5
0.15
150
0.2
4
20
11
50
3
2SC3838K
SMT3
T146
3000
NP
AD
Max.
180
0.5
0.5
0.5
1.5
12
1/2
Unit
mA
°C
°C
W
V
V
V
GHz
Unit
μA
μA
pF
dB
ps
V
V
V
V
I
I
I
V
V
I
V
V
V
V
V
C
C
E
C
CB
EB
/I
CE
CE
CB
CB
CE
= 10μA
= 1mA
= 10μA
B
/I
Dimensions (Unit : mm)
= 10V
= 2V
= 10V , I
= 10V , I
= 10V , I
= 6V , I
= 10mA/5mA
C
= 10V/5mA
2SC5662
ROHM : VMT3
2SC4726
ROHM : EMT3
EIAJ : SC-75A
2SC4083
ROHM : UMT3
EIAJ : SC-70
2SC3838K
ROHM : SMT3
EIAJ : SC-59
C
E
E
C
= 2mA , f = 500MHz , Rg = 50Ω
= − 10mA , f = 500MHz
= 0A , f = 1MHz
= 10mA , f = 31.8MHz
Conditions
0.2
0.22
0.65
( 3 )
0.95 0.95
( 3 )
( 3 )
( 2 )
( 2 )
0.5
( 2 )
2.0
1.3
1.0
1.6
1.9
0.65
2.9
(3)
0.5
0.32
0.4 0.4
(1)
1.2
0.8
0.3
0.3
(2)
( 1 )
0.4
( 1 )
0.2
( 1 )
0.2
0.15
0.5
0.55
0.7
0.15
0.13
0.9
0.15
0.7
2010.01 - Rev.D
1.1
Each lead has same dimensions
0.8
Each lead has same dimensions
(1) Base
(2) Emitter
(3) Collector
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector

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2SC5662T2LP Summary of contents

Page 1

High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) 2SC5662 / 2SC4726 /2SC4083 / 2SC3838K Features 1) High transition frequency. (Typ 3.2GHz Small rbb’Cc and high gain. (Typ. 4ps) 3) Small NF. Packaging specifications and h FE Type 2SC4726 2SC5662 ...

Page 2

Ta =25 °C =10V V CE 200 100 0.1 0.2 0 COLLECTOR CURRENT : I (mA) C Fig.1 DC current gain ...

Page 3

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...

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