MMST2907AT146 Rohm Semiconductor, MMST2907AT146 Datasheet
MMST2907AT146
Manufacturer Part Number
MMST2907AT146
Description
TRANSISTOR PNP 60V 0.6A SOT-346
Manufacturer
Rohm Semiconductor
Datasheet
1.SST2907AT116.pdf
(5 pages)
Specifications of MMST2907AT146
Transistor Type
PNP
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
1.6V @ 50mA, 500mA
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
200mW
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 60 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 0.6 A
Maximum Dc Collector Current
0.6 A
Power Dissipation
0.2 W
Maximum Operating Frequency
200 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
50
Gain Bandwidth Product Ft
200 MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMST2907AT146TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMST2907AT146
Manufacturer:
ROHM
Quantity:
9 000
Part Number:
MMST2907AT146
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
PNP Medium Power Transistor
(Switching)
UMT2907A / SST2907A / MMST2907A
1) BV
2) Complements the UMT2222A / SST2222A /
MMST2222A.
Transition frequency
Collector output capacitance
Emitter input capacitance
Turn-on time
Delay time
Rise time
Turn-off time
Storage time
Fall time
Collector power
dissipation
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
∗
Basic ordering unit
Features
Package, marking and packaging specifications
Electrical characteristics (Ta=25°C)
Absolute maximum ratings (Ta=25°C)
Mounted on a 7 x 5 x 0.6mm ceramic substrate.
Packaging type
Part No.
Marking
(pieces)
CEO
Code
< -60V (I
Parameter
Parameter
UMT2907A,
SST2907A,
MMST2907A
SST2907A
UMT2907A
UMT3
T106
3000
C
R2F
=-10mA)
SST2907A
SST3
T116
3000
R2F
Symbol
V
V
V
Tstg
P
CBO
CEO
EBO
I
Tj
C
Symbol
C
V
V
BV
BV
BV
I
I
I
CE(sat)
BE(sat)
Cob
MMST2907A
tstg
CBO
CES
EBO
Cib
ton
toff
h
f
td
T
tr
tf
CBO
CEO
EBO
FE
SMT3
T146
3000
R2F
−55 to +150
Limits
−0.6
0.35
−60
−60
150
0.2
−5
Min.
−60
−60
100
100
100
200
−5
75
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Unit
W
W
°C
°C
V
V
V
A
−100
−100
−100
Max.
−0.4
−1.6
−1.3
−2.6
300
100
30
50
10
40
80
30
−
8
−
−
−
−
−
−
−
UMT2907A / SST2907A / MMST2907A
∗
MHz
Unit
pF
pF
nA
nA
ns
ns
ns
ns
ns
ns
V
V
V
V
V
−
I
I
I
V
V
V
I
I
I
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
C
C
E
C
C
C
C
CB
CB
EB
CE
CE
CE
CE
CE
CE
CB
EB
CC
CC
CC
CC
CC
CC
= −10µA
= −10mA
= −10µA
/I
/I
/I
/I
Dimensions (Unit : mm)
UMT2907A
SST2907A
MMST2907A
B
B
B
B
ROHM : UMT3
EIAJ : SC-70
ROHM : SST3
ROHM : SMT3
EIAJ : SC-59
= −20V, I
= −10V, f=100kHz
= −2V, f=100kHz
= −50V
= −30V
= −3V
= −10V, I
= −10V, I
= −10V, I
= −10V, I
= −10V, I
= −30V, V
= −30V, V
= −30V, V
= −30V, I
= −30V , I
= −30V, I
= −150mA/ −15mA
= −500mA/ −50mA
= −150mA/ −15mA
= −500mA/ −50mA
E
C
C
C
C
C
C
C
C
BE(OFF)
BE(OFF)
BE(OFF)
=50mA, f=100MHz
= −150mA, I
= −150mA, I
= −0.1mA
= −1mA
= −10mA
= −150mA
= −500mA
= −150mA, I
= −1.5V, I
= −1.5V, I
= −1.5V, I
Conditions
B1
B1
B1
=I
=I
=I
C
C
C
B2
B2
= −150mA, I
= −150mA, I
=− 150mA, I
B2
= −15mA
= −15mA
= −15mA
B1
B1
B1
= −15mA
= −15mA
= −15mA
Rev.B
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
1/4
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MMST2907AT146 Summary of contents
Page 1
Transistors PNP Medium Power Transistor (Switching) UMT2907A / SST2907A / MMST2907A Features 1) BV < -60V (I =-10mA) CEO C 2) Complements the UMT2222A / SST2222A / MMST2222A. Package, marking and packaging specifications Part No. UMT2907A SST2907A MMST2907A Packaging type ...
Page 2
Transistors Electrical characteristic curves 100 600 Ta=25˚C 500 400 50 300 200 100 1 =0µ (V) COLLECTOR-EMITTER VOLTAGE : V CE Fig.1 Grounded emitter output characteristics 1000 100 10 0.1 1.0 10 COLLECTOR CURRENT : ...
Page 3
Transistors 1000 100 10 0.1 1.0 10 COLLECTOR CURRENT : I Fig.5 AC current gain vs. collector current 1.8 Ta=25˚C V =10V 1.6 CE 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1.0 10 100 1000 mA) COLLECTOR CURRENT : ...
Page 4
Transistors 1000 Ta=25˚C V =30V CC I =10I =10I 100 100 1000 COLLECTOR CURRENT : I ( mA) C Fig.13 Storage time vs. collector current UMT2907A / SST2907A / MMST2907A 1000 Ta=25˚C V =30V ...
Page 5
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...