2SA1036KT146Q Rohm Semiconductor, 2SA1036KT146Q Datasheet
2SA1036KT146Q
Manufacturer Part Number
2SA1036KT146Q
Description
TRANSISTOR PNP 32V 0.5A SOT-346
Manufacturer
Rohm Semiconductor
Datasheet
1.2SA1036KT146Q.pdf
(3 pages)
Specifications of 2SA1036KT146Q
Transistor Type
PNP
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
32V
Vce Saturation (max) @ Ib, Ic
600mV @ 30mA, 300mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 100mA, 3V
Power - Max
200mW
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
2SA1036KT146Q
2SA1036KT146QTR
SMT3/SC-59/SOT-346
2SA1036KT146QTR
SMT3/SC-59/SOT-346
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SA1036KT146Q
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Medium Power Transistor
Features
1) Large I
2) Low V
3) Complements the 2SC2411K.
Structure
Epitaxial planer type
PNP silicon transistor
Absolute maximum ratings (Ta=25C)
Electrical characteristics (Ta=25C)
Packaging specifications
h
∗
○
c
Type
2SA1036K
www.rohm.com
P
FE
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector outoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
C MAX.
I
operation.
2SA1036K
2009 ROHM Co., Ltd. All rights reserved.
CMAX.
values are classifies as follows.
Item
h
FE
must not be exceeded.
= -500mA
CE(sat).
Parameter
C
.
Parameter
120 to 270
QR
h
FE
Ideal for low-voltage
Q
Package
Code
Basic ordering unit (pieces)
180 to 390
R
Symbol
V
V
V
Tstg
P
CBO
CEO
EBO
I
Tj
Symbol
C
C
V
BV
BV
BV
Cob
I
I
CE(sat)
CBO
EBO
h
f
CBO
CEO
EBO
FE
T
Taping
Min.
T146
−55 to +150
3000
−40
−32
120
−5
−
−
−
−
−
Limits
−0.5
−40
−32
150
0.2
−5
Typ.
200
−
−
−
−
−
−
−
7
Max.
−0.6
390
−1
−1
−
−
−
−
−
Unit
°C
°C
W
1/2
V
V
V
A
MHz
Unit
μA
μA
pF
V
V
V
V
−
∗
I
I
I
V
V
I
V
V
V
C
C
E
C
= −100μA
CB
EB
CE
CE
CB
= −100μA
= −1mA
/I
B
= −20V
= −4V
= −3V, I
= −5V, I
= −10V, I
= −300mA/−30mA
Dimensions (Unit : mm)
∗
Conditions
Denotes h
C
E
=20mA, f=100MHz
= −100mA
E
=0A, f=1MHz
2SA1036K
(1)
ROHM : SMT3
EIAJ : SC-59
FE
0.95 0.95
1.9 0.2
2.9 0.2
All terminals have
same dimensions
±
±
(2)
(3)
0.4
Abbreviated symbol : H ∗
+0.1
-0.05
±
(1) Emitter
(2) Base
(3) Collector
0.15
2009.12 - Rev.B
-0.06
1.1
+0.1
0.8 0.1
+0.2
-0.1
±
0~0.1
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2SA1036KT146Q Summary of contents
Page 1
Medium Power Transistor 2SA1036K Features 1) Large -500mA CMAX. 2) Low V Ideal for low-voltage CE(sat). operation. 3) Complements the 2SC2411K. Structure Epitaxial planer type PNP silicon transistor Absolute maximum ratings (Ta=25C) Parameter Symbol Collector-base ...
Page 2
Ta=100 C -200 25 C -100 -55 C -50 -20 - -0.5 -0.2 -0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2 ...
Page 3
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...