2SC5053T100Q Rohm Semiconductor, 2SC5053T100Q Datasheet - Page 2

• Manufacturer Part Number: 2SC5053T100Q
• Description: TRANSISTOR NPN 50V 1A SOT-89
• Manufacturer: Rohm Semiconductor

Specifications of 2SC5053T100Q

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 500mA, 3V
• Power - Max: 2W
• Frequency - Transition: 150MHz
• Mounting Type: Surface Mount
• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Npn: MPT3
• Collector Emitter Voltage V(br)ceo: 50V
• Power Dissipation Pd: 500mW
• Dc Collector Current: 500mA
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-89
• No. Of Pins: 3
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 1 A
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 0.5 W
• Maximum Operating Frequency: 150 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 120
• Gain Bandwidth Product Ft: 150 MHz
• Dc Current Gain Hfe: 120
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2SC5053T100QTR

Transistors
Fig.1 Grounded emitter output characteristics
Electric characteristics curves
1000
1000
900
800
700
600
500
400
300
200
100
500
200
100
COLLECTOR TO EMITTER VOLTAGE : V
50
20
10
0
5
2
1
−1m
0
Fig.4 Gain bandwith product
10mA
1
EMITTER CURRENT : I
9mA
vs. emitter current
−10m
2
3
−0.1
E
(A )
4
Ta=25°C
V
CE
=5V
CE
−1
(V)
5
1000
200
100
Fig.5 Collector output capacitance
500
200
100
50
20
10
0.001
0.1
50
20
10
5
2
1
5
2
1
COLLECTOR TO BASE VOLTAGE : V
0.002
0.2
vs. collector-base voltage
COLLECTOR CURRENT : I
0.005
Fig.2 DC current gain
0.5
0.01
vs. collector current
0.02 0.05 0.1 0.2
1
2
5
Ta=25°C
f=1MHz
I
C
E
10
Ta=25°C
0.5
=0A
V
(A)
CE
CB
=3V
20
(V)
1
2
Fig.3 Collector-emitter saturation voltage
1000
0.05
0.02 Ta=25°C
0.01
0.5
0.2
0.1
500
200
100
COLLECTOR TO EMITTER VOLTAGE : I
50
20
10
0.2
1m
5
2
1
5
2
1
∗
nonrepeatitive pulse
vs.collector current
Single
I
C Max.
Fig.6 Safe operating area
COLLECTOR CURRENT : I
0.5
(Pulse )
10m
∗
1
Rev.D
100ms
2
DC
2SC5053
5
100m
10
10ms
20
C
Ta=25°C
I
(A)
C
/I
B
=10
50
1
CE
2/2
100
(V)
2