2SD2170T100 Rohm Semiconductor, 2SD2170T100 Datasheet
2SD2170T100
Manufacturer Part Number
2SD2170T100
Description
TRANSISTOR NPN 90V 2A SOT-89
Manufacturer
Rohm Semiconductor
Datasheet
1.2SD2170T100.pdf
(1 pages)
Specifications of 2SD2170T100
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
90V
Vce Saturation (max) @ Ib, Ic
1.5V @ 1mA, 1A
Dc Current Gain (hfe) (min) @ Ic, Vce
1000 @ 1A, 2V
Power - Max
2W
Frequency - Transition
80MHz
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
110 V
Emitter- Base Voltage Vebo
6 V
Collector- Base Voltage Vcbo
110 V
Maximum Dc Collector Current
2 A
Maximum Collector Cut-off Current
10 uA
Power Dissipation
0.5 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
2 A
Dc Collector/base Gain Hfe Min
1000
Gain Bandwidth Product Ft
80 MHz
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SD2170T100TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SD2170T100
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
Medium Power Transistor
(Motor, Relay drive) (90 , 2A)
2SD2170
!Features
1) Built-in zener diode between collector and base.
2) Zener diode has low dispersion.
3) Strong protection against reverse power surges due to
"L" loads.
4) Darlington connection for high DC current gain.
5) Built-in resistor between base and emitter.
6) Built-in damper diode.
! ! ! ! Absolute maximum ratings (Ta=25°C)
!Packaging specifications and h
! ! ! ! Electrical characteristics (Ta=25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
*
*
Basic ordering unit (pieces)
1 Single pulse Pw = 10ms , Duty = 1 / 2
2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
1 Measured using pulse current.
Package
Marking
Parameter
Code
Type
Parameter
h
FE
2SD2170
1k~10k
MPT3
T100
1000
*
Symbol
DM
V
V
V
Tstg
2 Transition frequency of the device.
P
Symbol
Tj
CBO
CEO
EBO
I
V
BV
BV
C
C
I
Cob
I
CE(sat)
CBO
EBO
h
f
CBO
CEO
T
FE
−55~+150
FE
1000
Min.
Limits
80
80
150
-
-
-
-
-
90
90
6
2
3
2
+20
−10
+20
−10
Typ.
80
25
-
-
-
-
-
-
10000
A (Pulse)
Max.
110
110
A (DC)
1.5
10
3
-
-
Unit
°C
°C
W
V
V
V
MHz
Unit
mA
µA
pF
*
*
V
V
V
-
1
2
I
I
V
V
I
V
V
V
C
C
C
CB
EB
CE
CE
CB
/I
= 50µA
= 1mA
B
= 5V
= 70V
= 2V , I
= 5V , I
= 10V , I
= 1A/1mA
! ! ! ! External dimensions (Units : mm)
ROHM : MPT3
EIAJ : SC-62
C
E
+20
−10
E
= 1A
= −0.1A , f = 30MHz
= 0A , f = 1MHz
Conditions
! ! ! ! Equivalent circuit
1.0
E
B
C
*
*
*
: Emitter
: Base
: Collector
1
1
2
( 1 )
( 2 )
( 3 )
B
4.0
2.5
R
1
0.5
R
R
1
2
R
3.5kΩ
300 Ω
2
C
E
2SD2170
(1) Base
(2) Collector
(3) Emitter
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