2SC4505T100P Rohm Semiconductor, 2SC4505T100P Datasheet
2SC4505T100P
Manufacturer Part Number
2SC4505T100P
Description
TRANS NPN 400V 100MA SOT-89
Manufacturer
Rohm Semiconductor
Specifications of 2SC4505T100P
Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
400V
Vce Saturation (max) @ Ib, Ic
500mV @ 1mA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
82 @ 10mA, 10V
Power - Max
2W
Frequency - Transition
20MHz
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Npn
MPT3
Collector Emitter Voltage V(br)ceo
400V
Power Dissipation Pd
500mW
Dc Collector Current
10mA
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOT-89
No. Of Pins
3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
400 V
Emitter- Base Voltage Vebo
7 V
Continuous Collector Current
0.1 A
Maximum Dc Collector Current
0.2 A
Power Dissipation
2 W
Maximum Operating Frequency
20 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
82
Gain Bandwidth Product Ft
20 MHz
Dc Current Gain Hfe
82
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SC4505T100P
2SC4505T100PTR
2SC4505T100PTR
Available stocks
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Transistors
Power Transistor (400V, 0.1A)
2SC4505
1) High breakdown voltage. (BV
2) Low saturation voltage,
3) High switching speed, typically tf = 1.7µs at Ic =100mA.
4) Complements the 2SC4505 and the 2SA1759.
∗
∗
∗
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1 Single pulse, Pw=20ms, Duty=1/2
2 When mounted on a 40
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
Denotes h
Features
Packaging specifications and h
Electrical characteristics (Ta=25 ° C)
Absolute maximum ratings (Ta=25 ° C)
typically V
Basic
FE
ordering unit
Parameter
Package
Marking
CE (sat)
Code
Type
h
FE
Parameter
= 0.05V at I
(pieces)
×
40
×
0.7mm ceramic board.
C
/ I
Symbol
CEO
B
V
V
V
Tstg
P
2SC4505
Tj
I
C
= 10mA / 1mA.
CBO
CEO
EBO
C
MPT3
T100
1000
CE ∗
= 400V)
FE
PQ
−55 to +150
Symbol
V
BV
BV
BV
V
Cob
I
I
Limits
CE(sat)
BE(sat)
CBO
t
EBO
t
h
400
400
150
f
stg
on
t
0.1
0.2
0.5
T
CBO
CEO
EBO
f
FE
7
2
Min.
400
400
A (Pulse)
82
7
A (DC)
−
−
−
−
−
−
−
−
−
Unit
°C
°C
W
W
V
V
V
∗
∗
Typ.
0.05
5.5
1.7
1
2
20
Dimensions (Unit : mm)
−
−
−
−
−
−
−
7
1
MPT3
(1)Base
(2)Collector
(3)Emitter
Max.
270
0.5
1.5
10
10
−
−
−
−
−
−
−
−
0.4
(1)
MHz
Unit
µA
µA
pF
µs
µs
µs
V
V
V
V
V
−
1.5
(2)
4.5
1.6
0.5
3.0
1.5
(3)
I
I
I
V
V
I
I
V
V
V
I
I
V
C
C
E
C
C
C
B1
=50µA
CB
EB
CE
CE
CB
CC
=50µA
=1mA
/I
/I
=−100mA R
=−I
B
B
0.4
=400V
=6V
=10V , I
=10V , I
=10V , I
~−150V
=10mA/1mA
=10mA/1mA
B2
=10mA
Conditions
Rev.D
1.5
C
E
E
=−10mA , f=10MHz
=0A , f=1MHz
=10mA
L
0.4
=1.5kΩ
2SC4505
1/3
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2SC4505T100P Summary of contents
Page 1
Transistors Power Transistor (400V, 0.1A) 2SC4505 Features 1) High breakdown voltage. (BV = 400V) CEO 2) Low saturation voltage, typically V = 0.05V 10mA / 1mA. CE (sat High switching speed, typically ...
Page 2
Transistors Electrical characteristics (Ta=25 ° C) 200 Ta =25 °C 160 120 80 40 =0mA COLLECTOR TO EMITTER VOLTAGE : V CE Fig.1 Ground emitter output characteristics 1000 =10V V CE ...
Page 3
Transistors 50µs duty cycle 1% − Fig.10 Switching time mesurement circuit R =1.5kΩ L Base current wave form TUT − 150V CC Collector current ...
Page 4
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...