BUL39D STMicroelectronics, BUL39D Datasheet - Page 2

• Manufacturer Part Number: BUL39D
• Description: TRANSISTOR POWER NPN TO-220
• Manufacturer: STMicroelectronics

Specifications of BUL39D

• Transistor Type: NPN
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 1.1V @ 500mA, 2.5A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 10mA, 5V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 450V
• Power Dissipation Pd: 70W
• Dc Collector Current: 2.5A
• Dc Current Gain Hfe: 10
• Transistor Case Style: TO-220
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: 497-7203-5; BUL39D

BUL39D
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
2/6
V
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
V
V
Symbol
R
R
CEO(sus)
CE(sat)
BE(sat)
V
thj-case
h
I
thj-amb
I
CES
EBO
CEW
FE
V
t
t
s
f
f
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Collector Cut-off
Current (V
Emitter Cut-off Current
(I
Collector-Emitter
Sustaining Voltage
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
Maximum Collector
Emitter Voltage
Without Snubber
INDUCTIVE LOAD
Storage Time
Fall Time
Diode Forward Voltage I
(I
C
B
= 0)
= 0)
Parameter
BE
= 0)
V
V
V
I
I
I
I
I
I
I
I
V
I
V
V
C
C
C
C
C
C
C
C
t
C
C
p
CE
CE
EB
BB
BE(off)
CL
= 100 mA
= 1 A
= 2.5 A
= 1 A
= 2.5 A
= 5 A
= 10 mA
= 6 A
= 2.5 A
= 2 A
= 10 s
= -2.5 V
= 9 V
= 300 V
= 850 V
= 850 V
case
= -5 V
= 25
Test Conditions
o
C unless otherwise specified)
R
L = 1 mH
I
V
V
I
I
I
I
R
B(on)
L = 50 H
BB
B
B
B
B
CE
T
L = 25 mH
CE
BB
j
= 0.5 A
= 0.5 A
= 0.2 A
= 0.2 A
= 0
= 125
= 10 V
= 5 V
= 0
= 0.5 A
Max
Max
o
C
Min.
450
450
10
4
1.78
70
Typ.
0.13
0.7
50
Max.
100
500
100
100
0.5
1.1
1.1
1.3
1.5
1.5
o
o
Unit
C/W
C/W
ns
V
V
V
V
V
V
V
A
A
A
s