MMBT6427LT1G ON Semiconductor, MMBT6427LT1G Datasheet - Page 12

• Manufacturer Part Number: MMBT6427LT1G
• Description: TRANS SS DARL NPN 40V SOT23
• Manufacturer: ON Semiconductor
• Type: Small Signalr

Specifications of MMBT6427LT1G

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 500µA, 500mA
• Current - Collector Cutoff (max): 1µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V
• Power - Max: 225mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 12 V
• Collector- Base Voltage Vcbo: 40 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.05 uA
• Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 0.5 A
• Dc Collector/base Gain Hfe Min: 10000
• Minimum Operating Temperature: - 55 C
• Capacitance, Input: 15 pF
• Current, Gain: 140000
• Current, Output: 500 mADC
• Package Type: SOT-23
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Ambient: 556
• Voltage, Collector To Emitter, Saturation: 1.5 VDC
• Voltage, Input: 12 VDC
• Voltage, Output: 40 VDC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT6427LT1GOS; MMBT6427LT1GOS; MMBT6427LT1GOSTR

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Issue Date: 11 Jul 2008
Rev.07-02-06
Page 12 of 14