2SB1132T100R Rohm Semiconductor, 2SB1132T100R Datasheet - Page 4

• Manufacturer Part Number: 2SB1132T100R
• Description: TRANSISTOR PNP 32V 1A SOT-89
• Manufacturer: Rohm Semiconductor

Specifications of 2SB1132T100R

• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 32V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 100mA, 3V
• Power - Max: 2W
• Frequency - Transition: 150MHz
• Mounting Type: Surface Mount
• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 32 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 1 A
• Maximum Dc Collector Current: - 2 A
• Power Dissipation: 2 W
• Maximum Operating Frequency: 150 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 82
• Gain Bandwidth Product Ft: 150 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2SB1132T100R; 2SB1132T100RTR

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2SB1132 / 2SA1515S / 2SB1237
c
www.rohm.com
1000
Fig.10 Transient thermal resistance
100
2009 ROHM Co., Ltd. All rights reserved.
0.1
10
0.001
1
0.01
(2SB1132)
0.1
TIME : t
1
(s)
10
Ta=25 C
100
1000
−0.05
−0.02
−0.01
−0.5
−0.2
−0.1
−5
−2
−1
COLLECTOR TO EMITTER VOLTAGE : V
−0.1
−0.2
Fig.11 Safe operation area
P
P
W
W
I
−0.5 −1
C Max
=10ms
=100ms
.
DC
∗
(2SB1237)
4/4
∗
∗
−2
−5 −10 −20
Ta=25 C
∗
Single pulse
CE
−50
(V)
Fig.12 Transient thermal resistance
200
100
50
20
10
5
2
0.01
(2SB1237)
0.1
2009.12 - Rev.C
TIME : t
1
Data Sheet
(s)
10
100
Ta=25 C
1000