2SA1797T100Q Rohm Semiconductor, 2SA1797T100Q Datasheet
2SA1797T100Q
Manufacturer Part Number
2SA1797T100Q
Description
TRANSISTOR PNP 50V 3A SOT-89
Manufacturer
Rohm Semiconductor
Specifications of 2SA1797T100Q
Transistor Type
PNP
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
350mV @ 50mA, 1A
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 500mA, 2V
Power - Max
2W
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Configuration
Single
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
- 50 V
Emitter- Base Voltage Vebo
- 6 V
Continuous Collector Current
- 2 A
Maximum Dc Collector Current
- 5 A
Power Dissipation
2 W
Maximum Operating Frequency
200 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
82
Gain Bandwidth Product Ft
200 MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SA1797T100Q
2SA1797T100QTR
2SA1797T100QTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SA1797T100Q
Manufacturer:
SANREX
Quantity:
23
Company:
Part Number:
2SA1797T100Q
Manufacturer:
ROHM
Quantity:
47 000
Part Number:
2SA1797T100Q
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Power Transistor (−50V, −3A)
1) Low saturation voltage.
2) Excellent DC current gain characteristics.
3) Complements the 2SC4672.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗ Measured using pulse current
Package
h
Marking
Code
Basic ordering unit (pieces)
○
∗Denotes h
∗1 Single pulse, Pw=10ms
∗2 When mounted on a 40 40 0.7mm ceramic board.
c
www.rohm.com
FE
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Features
Packaging specifications
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
V
2SA1797
2009 ROHM Co., Ltd. All rights reserved.
CE (sat)
∗
FE
Parameter
Type
= −0.35V (Max.) at I
Parameter
2SA1797
2SA1797
MPT3
T100
1000
PQ
AG
C
Symbol
V
V
V
/ I
Tstg
P
Tj
CBO
CEO
EBO
I
C
B
C
∗
∗
= −1A / 50mA.
1
2
Symbol
V
BV
BV
BV
h
h
Cob
I
I
CE(sat)
FE1
FE2
CBO
EBO
f
T
CBO
CEO
EBO
−55 to +150
∗
∗
∗
∗
Limits
−50
−50
150
0.5
−6
−3
−6
2
Min.
−50
−50
−6
82
45
−
−
−
−
−
−0.15
A (Pulse)
Typ.
200
36
A (DC)
−
−
−
−
−
−
−
Unit
°C
°C
W
V
V
V
1/2
Dimensions (Unit : mm)
MPT3
(1)Base
(2)Collector
(3)Emitter
−0.35
Max.
−0.1
−0.1
270
−
−
−
−
−
−
MHz
Unit
µA
µA
pF
V
V
V
V
−
−
0.4
(1)
1.5
(2)
I
I
I
V
V
I
V
V
V
V
C
C
E
C
3.0
4.5
1.6
0.5
CB
EB
CE
CE
CE
CB
=−50µA
=−50µA
=−1mA
/I
1.5
B
=−50V
=−5V
/I
/I
=−2V, I
=−10V, I
(3)
=−1A/−50mA
C
C
=−2V/−0.5A
=−2V/−1.5A
0.4
E
=0.5A, f=100MHz
E
=0A, f=1MHz
Conditions
1.5
0.4
2009.04 - Rev.C
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2SA1797T100Q Summary of contents
Page 1
Power Transistor (−50V, −3A) 2SA1797 Features 1) Low saturation voltage −0.35V (Max −1A / 50mA. CE (sat Excellent DC current gain characteristics. 3) Complements the 2SC4672. Packaging specifications Type 2SA1797 ...
Page 2
Electrical characteristic curves 2.0 Ta=25°C 1.8 1.6 1.4 1.2 1 800m 600m 400m 200m COLLECTOR TO EMITTER VOLTAGE : V (V) CE Fig.1 Grounded EmitterOutput Characteristics -1 ...
Page 3
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...