BGA 622 H6820 Infineon Technologies, BGA 622 H6820 Datasheet - Page 5

• Manufacturer Part Number: BGA 622 H6820
• Description: RF Amplifier RF SILICON MMIC
• Manufacturer: Infineon Technologies
• Type: Silicon Germanium MMICr

Specifications of BGA 622 H6820

• Operating Frequency: 1.575 GHz
• P1db: - 16.5 dBm
• Noise Figure: 1 dB
• Operating Supply Voltage: 2.75 V
• Supply Current: 10 mA
• Maximum Power Dissipation: 35 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-343
• Minimum Operating Temperature: - 65 C
• Other names: BGA622H6820XT

Maximum Ratings
Table 1
Parameter
Voltage at pin
Voltage at pin Out
Current into pin In
Current into pin Out
Current into pin
Total power dissipation,
Junction temperature
Ambient temperature range
Storage temperature range
ESD capability all pins (HBM: JESD22-A114)
1)
Note: All Voltages refer to GND-Node
Thermal resistance
Table 2
Parameter
Junction - soldering point
1) For calculation of
Data Sheet
RF input power
T
S
is measured on the ground lead at the soldering point
Maximum ratings
Thermal resistance
V
CC
V
CC
R
thJA
please refer to Application Note Thermal Resistance
T
1)
S
< 139 °C
Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection
1)
Symbol
R
thJS
Symbol
V
V
I
I
I
P
P
T
T
T
V
in
out
Vcc
J
A
STG
CC
out
in
tot
ESD
5
Value
300
Limit Value
3.5
4
0.1
1
10
6
35
150
-65... 150
-65... 150
2000
Unit
K/W
Unit
V
V
mA
mA
mA
dBm
mW
°C
°C
°C
V
Rev. 2.2, 2008-04-14
BGA622