BGA 622 H6820 Infineon Technologies, BGA 622 H6820 Datasheet - Page 6
![RF Amplifier RF SILICON MMIC](/photos/16/1/160128/sot343_sml.jpg)
BGA 622 H6820
Manufacturer Part Number
BGA 622 H6820
Description
RF Amplifier RF SILICON MMIC
Manufacturer
Infineon Technologies
Type
Silicon Germanium MMICr
Datasheet
1.BGA_622_H6820.pdf
(12 pages)
Specifications of BGA 622 H6820
Operating Frequency
1.575 GHz
P1db
- 16.5 dBm
Noise Figure
1 dB
Operating Supply Voltage
2.75 V
Supply Current
10 mA
Maximum Power Dissipation
35 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-343
Minimum Operating Temperature
- 65 C
Other names
BGA622H6820XT
2
2.1
Table 3
Parameter
Insertion power gain
Insertion power gain (Off-State)
Input return loss (On-State)
Output return loss (On-State)
Noise figure (
Input third order intercept point
(On-State)
Input third order intercept point
(Off - State)
Input power at 1 dB gain compression
Total device off current
Total device on current
On / Off switch control voltage
1)
Data Sheet
IP
is 50
3
values depends on termination of all intermodulation frequency components. Termination used for this measurement
from 0.1 to 6 GHz
Electrical Characteristics
Electrical characteristics at
V
Electrical Characteristics
Z
CC
S
= 50
= 2.75 V, Frequency = 1.575 GHz, unless otherwise specified
1)
1)
Symbol
|S
|S
RL
RL
F
IIP
IIP
P
I
I
V
V
tot-off
tot-on
50
-1dB
on
off
21
21
in
out
3
3
|
|
2
2
T
A
Min.
130
4.0
0
2.0
= 25 °C (measured according to
6
Typ.
15.0
-27
5
12
1.00
0
20
-16.5
260
5.8
Values
Max.
420
7.8
0.8
3.5
Electrical Characteristics
Unit
dB
dB
dB
dB
dB
dBm
dBm
dBm
mA
V
V
A
Rev. 2.2, 2008-04-14
Figure
Note /
Test Condition
f
P
P
V
V
V
V
ON-Mode:
V
V
OFF-Mode:
V
= 0.1 GHz
f
f
IN
IN
CC
out
CC
CC
out
CC
out
= 1 MHz,
= 1 MHz,
= -28 dBm
= -8 dBm
=
=
=
= 2.75 V,
= 2.75 V
= 2.75 V
= 2.75 V
V
V
V
BGA622
CC
on
off
2)