BGA 622 H6820 Infineon Technologies, BGA 622 H6820 Datasheet - Page 7
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BGA 622 H6820
Manufacturer Part Number
BGA 622 H6820
Description
RF Amplifier RF SILICON MMIC
Manufacturer
Infineon Technologies
Type
Silicon Germanium MMICr
Datasheet
1.BGA_622_H6820.pdf
(12 pages)
Specifications of BGA 622 H6820
Operating Frequency
1.575 GHz
P1db
- 16.5 dBm
Noise Figure
1 dB
Operating Supply Voltage
2.75 V
Supply Current
10 mA
Maximum Power Dissipation
35 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-343
Minimum Operating Temperature
- 65 C
Other names
BGA622H6820XT
2.2
Table 4
Parameter
Insertion power gain
Insertion power gain (Off-State)
Input return loss (On-State)
Output return loss (On-State)
Noise figure (
Input third order intercept Point
(On-State)
Input third order intercept point
(Off-State)
Input power at 1 dB gain compression
1)
Figure 2
Data Sheet
IP
is 50
3
values depends on termination of all intermodulation frequency components. Termination used for this measurement
from 0.1 to 6 GHz
Electrical characteristics at
V
Electrical Characteristics
S-Parameter Test Circuit (loss-free microstrip test-fixture)
Z
CC
S
= 50
= 2.75 V, Frequency = 2.14 GHz, unless otherwise specified
1)
1)
Symbol
|S
|S
RL
RL
F
IIP
IIP
P
50
-1dB
21
21
in
out
3
3
|
|
2
2
150pF
2.75V
BGA622_S_Parameter_Circuit.vsd
DC,
T
A
Min.
In, 50
= 25 °C (measured according to
7
Out, 50
Typ.
13.6
-24
7
10
1.05
3
20
-13
Values
Max.
Electrical Characteristics
Unit
dB
dB
dB
dB
dB
dBm
dBm
dBm
Rev. 2.2, 2008-04-14
Figure
Note /
Test Condition
P
P
f
f
IN
IN
= 1 MHz,
= 1 MHz,
= -28 dBm
= -8 dBm
BGA622
2)