KSC5402DTTU Fairchild Semiconductor, KSC5402DTTU Datasheet

TRANSISTOR NPN 450V 2A TO-220

KSC5402DTTU

Manufacturer Part Number
KSC5402DTTU
Description
TRANSISTOR NPN 450V 2A TO-220
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of KSC5402DTTU

Transistor Type
NPN
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
450V
Vce Saturation (max) @ Ib, Ic
750mV @ 200mA, 1A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
6 @ 1A, 1V
Power - Max
50W
Frequency - Transition
11MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
KSC5402DTTU
Manufacturer:
SANKEN
Quantity:
4 000
Part Number:
KSC5402DTTU
Manufacturer:
FAIRCHILD
Quantity:
8 000
Part Number:
KSC5402DTTU
Manufacturer:
FAI
Quantity:
20 000
KSC5402D/KSC5402DT Rev. C0
© 2009 Fairchild Semiconductor Corporation
KSC5402D/KSC5402DT
NPN Silicon Transistor, Planar Silicon Transistor
Features
• High Voltage High Speed Power Switch Application
• Wide Safe Operating Area
• Built-in Free Wheeling Diode
• Suitable for Electronic Ballast Application
• Small Variance in Storage Time
• Two Package Choices; D-PAK or TO-220
Absolute Maximum Ratings
* Pulse Test: Pulse Width=5ms, Duty Cycle<10%
Thermal Characteristics
* Mounted on 1” square PCB (FR4 ro G-10 Material)
Symbol
Symbol
V
V
V
T
R
R
I
I
P
CBO
CEO
STG
T
EBO
T
I
CP
I
BP
θJC
θJA
C
B
C
J
L
Thermal Resistance
Maximum Lead Temperature for Soldering Purpose
; 1/8” from Case for 5 Seconds
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
*Base Current (Pulse)
Power Dissipation(T
Junction Temperature
Storage Temperature
T
A
=25°C unless otherwise noted
C
T
Parameter
Parameter
=25°C)
A
=25°C unless otherwise noted
Junction to Case
Junction to Ambient
: D-PAK*
: TO-220
1
B
Equivalent Circuit
TO-220
C
E
62.5
270
2.5
1.Base
- 65 to 150
Rating
Value
1000
450
150
12
30
50
2
2
5
1
D-PAK
TO-220
1
2.Collector
D-PAK
1
4.17*
270
50
December 2009
www.fairchildsemi.com
3.Emitter
Units
Units
°C/W
°C/W
°C
°C
°C
W
W
V
V
V
A
A
A
A

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KSC5402DTTU Summary of contents

Page 1

... Thermal Characteristics Symbol R Thermal Resistance θJC R θJA T Maximum Lead Temperature for Soldering Purpose L ; 1/8” from Case for 5 Seconds * Mounted on 1” square PCB (FR4 ro G-10 Material) © 2009 Fairchild Semiconductor Corporation KSC5402D/KSC5402DT Rev =25°C unless otherwise noted A Parameter =25°C) : D-PAK TO-220 T =25° ...

Page 2

... DC Current Gain FE V (sat) Collector-Emitter Saturation CE Voltage V (sat) Base-Emitter Saturation BE Voltage C Input Capacitance ib C Output Capacitance ob f Current Gain Bandwidth T Product V Diode Forward Voltage F © 2009 Fairchild Semiconductor Corporation KSC5402D/KSC5402DT Rev =25°C unless otherwise noted A Test Condition I =1mA =5mA =1mA =1000V CES ...

Page 3

... Fall Time F t Cross-over Time C t Storage Time STG t Fall Time F t Cross-over Time C t Storage Time STG t Fall Time F t Cross-over Time C © 2009 Fairchild Semiconductor Corporation KSC5402D/KSC5402DT Rev. C0 (Continued) T =25°C unless otherwise noted A Test Condition I =0. =0. = =0.4A, I =40mA =300V CC ...

Page 4

... 1E-3 0.01 I [A], COLLECTOR CURRENT C Figure 3. DC current Gain =25 ℃ 0.1 1E-3 0.01 I [A], COLLECTOR CURRENT C Figure 5. Base-Emitter Saturation Voltage © 2009 Fairchild Semiconductor Corporation KSC5402D/KSC5402DT Rev 900mA 800mA 700mA 100 600mA 500mA 400mA 300mA 200mA 100mA 0.1 0.1 1 Figure 4 ...

Page 5

... I [A], COLLECTOR CURRENT C Figure 9. Typical Collector Saturation Region 10 1 =25 ℃ 0.1 0.01 0.1 I [A], CURRENT FD Figure 11. Diode Forward Voltage © 2009 Fairchild Semiconductor Corporation KSC5402D/KSC5402DT Rev. C0 (Continued) 1000 100 =125 ℃ 0.1 1 Figure 8. Collector Output Capacitance =25 ℃ 2.0A 1.5A 0.1 ...

Page 6

... =5I = =15V CC V =300V Z μ L =200 0.4 0.6 0.8 I [A], COLLECTOR CURRENT c Figure 17. Inductive Switching Time, t © 2009 Fairchild Semiconductor Corporation KSC5402D/KSC5402DT Rev. C0 (Continued) 850 I =5I = =300V CC μ PW=40 s 800 750 700 =125 ℃ 650 600 550 1.0 1.2 1.4 Figure 14 ...

Page 7

... I [A], COLLECTOR CURRENT c Figure 21. Inductive Switching Time 5ms 1 DC 0.1 0.01 10 100 V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 23. Forward Bias Safe Operating Area © 2009 Fairchild Semiconductor Corporation KSC5402D/KSC5402DT Rev. C0 (Continued) 1.6 1.4 =125 ℃ T 1.2 J 1.0 =25 ℃ 0.8 0.6 1.0 1.2 1 ...

Page 8

... Physical Dimension © 2009 Fairchild Semiconductor Corporation KSC5402D/KSC5402DT Rev. C0 TO-220 9.90 ±0.20 (8.70) ø3.60 ±0.10 ±0.10 ±0.10 1.27 1.52 ±0.10 0.80 2.54TYP 2.54TYP [2.54 ±0.20 ] [2.54 ±0.20 ] ±0.20 10.00 8 4.50 ±0.20 +0.10 1.30 –0.05 +0.10 0.50 ±0.20 2.40 –0.05 Dimensions in Millimeters ...

Page 9

... Physical Dimension (Continued) © 2009 Fairchild Semiconductor Corporation KSC5402D/KSC5402DT Rev. C0 D-PAK 9 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower FPS Auto-SPM F-PFS FRFET Build it Now CorePLUS Global Power Resource CorePOWER Green FPS CROSSVOLT Green FPS CTL™ ...

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