BC846BW,135 NXP Semiconductors, BC846BW,135 Datasheet - Page 6

• Manufacturer Part Number: BC846BW,135
• Description: TRANSISTOR NPN 100MA 65V SOT323
• Manufacturer: NXP Semiconductors

Specifications of BC846BW,135

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 65V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 200mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 934021740135; BC846BW /T3; BC846BW /T3

NXP Semiconductors
BC846_BC546_SER_7
Product data sheet
Fig 1.
Fig 3.
V
(mV)
CEsat
h
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
400
300
200
100
10
10
10
0
10
10
3
2
V
Selection A: DC current gain as a function of
collector current; typical values
I
Selection A: Collector-emitter saturation
voltage as a function of collector current;
typical values
C
−1
−1
CE
amb
amb
amb
amb
amb
amb
/I
B
= 5 V
= 20
= 150 °C
= 25 °C
= −55 °C
= 150 °C
= 25 °C
= −55 °C
1
1
(1)
(2)
(3)
(1)
(2)
(3)
10
10
10
10
2
2
I
I
C
C
(mA)
(mA)
mgt725
mgt723
Rev. 07 — 17 November 2009
10
10
3
3
Fig 2.
Fig 4.
V
(mV)
(mV)
BEsat
V
BE
1200
1000
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
1200
1000
65 V, 100 mA NPN general-purpose transistors
800
600
400
200
800
600
400
200
0
10
0
10
V
Selection A: Base-emitter voltage as a function
of collector current; typical values
I
Selection A: Base-emitter saturation voltage
as a function of collector current; typical
values
−1
C
−1
amb
amb
amb
amb
amb
amb
CE
/I
B
BC846/BC546 series
= 5 V
= 10
= −55 °C
= 25 °C
= 150 °C
= −55 °C
= 25 °C
= 150 °C
1
1
(1)
(2)
(3)
(1)
(2)
(3)
10
10
10
10
© NXP B.V. 2009. All rights reserved.
2
2
I
I
C
C
(mA)
(mA)
mgt726
mgt724
10
10
3
3
6 of 14