BC857CW,115 NXP Semiconductors, BC857CW,115 Datasheet - Page 6

• Manufacturer Part Number: BC857CW,115
• Description: TRANSISTOR PNP 45V 100MA SOT323
• Manufacturer: NXP Semiconductors

Specifications of BC857CW,115

• Package / Case: SC-70-3, SOT-323-3
• Mounting Type: Surface Mount
• Power - Max: 200mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Transistor Type: PNP
• Frequency - Transition: 100MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 420 @ 2mA, 5V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Dc Collector/base Gain Hfe Min: 420
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 45 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 100 mA
• Maximum Dc Collector Current: - 200 mA
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 45V
• Collector-base Voltage: 50V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 420
• Frequency (max): 100MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SC-70
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934021860115::BC857CW T/R::BC857CW T/R

NXP Semiconductors
2002 Feb 04
handbook, halfpage
handbook, halfpage
PNP general purpose transistors
V CEsat
BC857BW; V
(1) T
(2) T
(3) T
Fig.6
BC857BW; I
(1) T
(2) T
(3) T
Fig.8
(mV)
h FE
1000
−10
−10
−10
800
600
400
200
−10
−10
−10
amb
amb
amb
amb
amb
amb
0
4
3
2
−1
−2
= 150 °C.
= 25 °C.
= −55 °C.
= 150 °C.
= 25 °C.
= −55 °C.
DC current gain as a function of collector
current; typical values.
Collector-emitter saturation voltage as a
function of collector current; typical values.
C
CE
/I
B
−10
= −5 V.
= 20.
−1
−1
(1)
(3)
(2)
−1
(1)
(2)
(3)
−10
−10
−10
−10
2
I C (mA)
I C (mA)
2
MGT715
MGT717
−10
−10
3
3
6
handbook, halfpage
handbook, halfpage
V BEsat
(mV)
V BE
(mV)
BC857BW; V
(1) T
(2) T
(3) T
Fig.7
BC857BW; I
(1) T
(2) T
(3) T
Fig.9
−1000
−1200
−1200
−1000
−800
−600
−400
−200
−800
−600
−400
−200
−10
−10
amb
amb
amb
amb
amb
amb
0
0
−2
−1
BC856W; BC857W; BC858W
= −55 °C.
= 25 °C.
= 150 °C.
= −55 °C.
= 25 °C.
= 150 °C.
Base-emitter voltage as a function of
collector current; typical values.
Base-emitter saturation voltage as a
function of collector current; typical values.
C
CE
/I
B
−10
= −5 V.
= 20.
−1
−1
(1)
(2)
(3)
−1
(1)
(2)
(3)
−10
−10
−10
Product data sheet
−10
2
I C (mA)
I C (mA)
2
MGT716
MGT718
−10
−10
3
3