BC849BW,115 NXP Semiconductors, BC849BW,115 Datasheet - Page 4

• Manufacturer Part Number: BC849BW,115
• Description: TRANSISTOR NPN 30V 100MA SOT323
• Manufacturer: NXP Semiconductors

Specifications of BC849BW,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 200mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934022020115; BC849BW T/R; BC849BW T/R

NXP Semiconductors
1999 Apr 12
handbook, full pagewidth
handbook, full pagewidth
NPN general purpose transistors
BC849BW; BC850BW.
BC849CW; BC850CW.
h FE
h FE
300
200
100
600
400
200
0
0
10
10
−2
−2
10
10
−1
−1
Fig.2 DC current gain; typical values.
Fig.3 DC current gain; typical values.
1
1
4
10
10
V CE = 5 V
V CE = 5 V
BC849W; BC850W
10
10
2
2
I C (mA)
I C (mA)
Product data sheet
MBH724
MBH725
10
10
3
3