BCV26,215 NXP Semiconductors, BCV26,215 Datasheet

TRANS DARL PNP 30V 500MA SOT23

BCV26,215

Manufacturer Part Number
BCV26,215
Description
TRANS DARL PNP 30V 500MA SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BCV26,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Mounting Type
Surface Mount
Power - Max
250mW
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
30V
Transistor Type
PNP - Darlington
Frequency - Transition
220MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
20000 @ 100mA, 5V
Vce Saturation (max) @ Ib, Ic
1V @ 100µA, 100mA
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
10 V
Collector- Base Voltage Vcbo
40 V
Maximum Dc Collector Current
0.5 A
Maximum Collector Cut-off Current
0.1 uA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933806210215::BCV26 T/R::BCV26 T/R
Product data sheet
Supersedes data of 1999 Apr 08
DATA SHEET
BCV26; BCV46
PNP Darlington transistors
DISCRETE SEMICONDUCTORS
2004 Jan 13

Related parts for BCV26,215

BCV26,215 Summary of contents

Page 1

DATA SHEET BCV26; BCV46 PNP Darlington transistors Product data sheet Supersedes data of 1999 Apr 08 DISCRETE SEMICONDUCTORS 2004 Jan 13 ...

Page 2

... NXP Semiconductors PNP Darlington transistors FEATURES • High current (max. 500 mA) • Low voltage (max • Very high DC current gain (min. 10 000). APPLICATIONS • Where very high amplification is required. DESCRIPTION PNP Darlington transistor in a SOT23 plastic package. NPN complements: BCV27 and BCV47. ...

Page 3

... NXP Semiconductors PNP Darlington transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO BCV26 BCV46 V collector-emitter voltage CES BCV26 BCV46 V emitter-base voltage EBO I collector current (DC peak collector current CM I base current (DC total power dissipation ...

Page 4

... NXP Semiconductors PNP Darlington transistors CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector cut-off current CBO BCV26 BCV46 I emitter cut-off current EBO h DC current gain FE BCV26 BCV46 DC current gain BCV26 BCV46 DC current gain BCV26 BCV46 V collector-emitter saturation CEsat voltage V base-emitter saturation voltage ...

Page 5

... NXP Semiconductors PNP Darlington transistors PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 Jan scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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