BCV26,215 NXP Semiconductors, BCV26,215 Datasheet - Page 2

• Manufacturer Part Number: BCV26,215
• Description: TRANS DARL PNP 30V 500MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BCV26,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Transistor Type: PNP - Darlington
• Frequency - Transition: 220MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V
• Vce Saturation (max) @ Ib, Ic: 1V @ 100µA, 100mA
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 40 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933806210215::BCV26 T/R::BCV26 T/R

NXP Semiconductors
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 60 V)
• Very high DC current gain (min. 10 000).
APPLICATIONS
• Where very high amplification is required.
DESCRIPTION
PNP Darlington transistor in a SOT23 plastic package.
NPN complements: BCV27 and BCV47.
MARKING
Note
1. * = p : Made in Hong Kong.
ORDERING INFORMATION
2004 Jan 13
BCV26
BCV46
BCV26
BCV46
NUMBER
PNP Darlington transistors
* = t : Made in Malaysia.
* = W : Made in China.
TYPE
TYPE NUMBER
NAME
−
plastic surface mounted package; 3 leads
MARKING CODE
FD*
FE*
(1)
DESCRIPTION
2
PACKAGE
PINNING
handbook, halfpage
Top view
Fig.1 Simplified outline (SOT23) and symbol.
PIN
1
2
3
1
base
emitter
collector
3
2
DESCRIPTION
BCV26; BCV46
Product data sheet
1
TR1
VERSION
SOT23
MAM299
TR2
3
2