BCV26,215 NXP Semiconductors, BCV26,215 Datasheet - Page 7

• Manufacturer Part Number: BCV26,215
• Description: TRANS DARL PNP 30V 500MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BCV26,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Transistor Type: PNP - Darlington
• Frequency - Transition: 220MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V
• Vce Saturation (max) @ Ib, Ic: 1V @ 100µA, 100mA
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 40 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933806210215::BCV26 T/R::BCV26 T/R

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NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
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R75/05/pp7
Date of release: 2004 Jan 13
Document order number: 9397 750 12401