BCX52-10,115 NXP Semiconductors, BCX52-10,115 Datasheet - Page 6

• Manufacturer Part Number: BCX52-10,115
• Description: TRANSISTOR PNP 60V 1A SOT89
• Manufacturer: NXP Semiconductors

Specifications of BCX52-10,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Mounting Type: Surface Mount
• Power - Max: 1.3W
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 60V
• Transistor Type: PNP
• Frequency - Transition: 145MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 63 @ 150mA, 2V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 1300 mW
• Maximum Operating Frequency: 145 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933663050115::BCX52-10 T/R::BCX52-10 T/R

NXP Semiconductors
6. Thermal characteristics
BCP52_BCX52_BC52PA
Product data sheet
Table 7.
[1]
[2]
[3]
[4]
[5]
Symbol
R
R
th(j-a)
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
BCP52
BCX52
BC52PA
BCP52
BCX52
BC52PA
All information provided in this document is subject to legal disclaimers.
Rev. 9 — 18 October 2011
BCP52; BCX52; BC52PA
Conditions
in free air
60 V, 1 A PNP medium power transistors
[1]
[2]
[3]
[1]
[2]
[3]
[1]
[2]
[3]
[4]
[5]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2011. All rights reserved.
Max
192
125
93
250
132
93
298
151
114
154
76
16
16
20
2
.
2
2
K/W
K/W
K/W
K/W
K/W
K/W
K/W
Unit
K/W
K/W
K/W
K/W
K/W
K/W
K/W
.
.
6 of 22