2SC3837KT146N Rohm Semiconductor, 2SC3837KT146N Datasheet
2SC3837KT146N
Manufacturer Part Number
2SC3837KT146N
Description
TRANS NPN 20V 50MA SOT-346 TR
Manufacturer
Rohm Semiconductor
Datasheet
1.2SC3837KT146P.pdf
(4 pages)
Specifications of 2SC3837KT146N
Transistor Type
NPN
Current - Collector (ic) (max)
50mA
Voltage - Collector Emitter Breakdown (max)
20V
Vce Saturation (max) @ Ib, Ic
500mV @ 4mA, 20mA
Dc Current Gain (hfe) (min) @ Ic, Vce
82 @ 10mA, 10V
Power - Max
200mW
Frequency - Transition
1.5GHz
Mounting Type
Surface Mount
Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Npn
Transistor Polarity
Collector Emitter Voltage V(br)ceo
18V
Power Dissipation Pd
200mW
Dc Collector Current
20mA
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOT-346
No. Of Pins
3
Transistor Polarity
NPN
Dc Current Gain Hfe
56
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz)
Features
1) High transition frequency. (Typ. f
2) Small rbb’Cc and high gain. (Typ. 6ps)
3) Small NF.
Packaging specifications and h
Absolute maximum ratings (Ta=25C)
Electrical characteristics (Ta=25C)
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
○
Basic ordering unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗ Denotes h
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Collector-base time constant
Noise factor
c
www.rohm.com
2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K
2009 ROHM Co., Ltd. All rights reserved.
Package
Marking
(pieces)
Code
Type
h
FE
FE
Parameter
Parameter
2SC5661, 2SC4725
2SC4082, 2SC3837K
2SC5661
VMT3
8000
AC ∗
T2L
NP
2SC4725
EMT3
3000
AC ∗
NP
TL
Symbol
rbb' ·Cc
V
BV
BV
BV
I
I
Cob
CE(sat)
h
NF
CBO
EBO
f
FE
CBO
CEO
T
EBO
T
FE
= 1.5GHz)
Symbol
V
V
V
Tstg
P
Tj
CBO
CEO
EBO
I
C
C
2SC4082
Min.
600
UMT3
30
20
82
T106
3000
3
−
−
−
−
−
−
1C ∗
NP
−55 to +150
Limits
1500
Typ.
0.15
0.9
4.5
150
0.2
30
20
50
−
−
−
−
−
−
−
6
3
2SC3837K
SMT3
T146
3000
AC ∗
NP
Max.
180
0.5
0.5
0.5
1.5
13
−
−
−
−
−
Unit
mA
°C
°C
W
V
V
V
MHz
Unit
μA
μA
pF
dB
ps
V
V
V
V
−
1/3
I
I
I
V
V
I
V
V
V
V
V
C
C
E
C
CB
EB
CE
CE
CB
CB
CE
/I
= 10μA
= 10μA
= 1mA
B
/I
= 15V
= 2V
= 10V , I
= 10V , I
= 10V , I
= 12V , I
= 20mA/4mA
C
= 10V/10mA
Dimensions (Unit : mm)
E
E
C
C
= − 10mA , f = 200MHz
= 0A , f = 1MHz
= 10mA , f = 31.8MHz
= 2mA , f = 200MHz , Rg = 50Ω
2SC5661
ROHM : VMT3
2SC4725
ROHM : EMT3
EIAJ : SC-75A
2SC4082
ROHM : UMT3
EIAJ : SC-70
2SC3837K
ROHM : SMT3
EIAJ : SC-59
Conditions
0.95 0.95
( 3 )
( 2 )
2.9
1.9
0.4
( 1 )
0.15
1.1
0.8
2009.12 - Rev.C
Each lead has same dimensions
Each lead has same dimensions
(1) Base
(2) Emitter
(3) Collector
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
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2SC3837KT146N Summary of contents
Page 1
High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Features 1) High transition frequency. (Typ 1.5GHz Small rbb’Cc and high gain. (Typ. 6ps) 3) Small NF. Packaging specifications and h FE Type ...
Page 2
Ta=25°C =10V V CE 200 100 0.1 0.2 0 COLLECTOR CURRENT : I (mA) C Fig.1 DC current gain vs. ...
Page 3
Ta=25°C =2mA I C f=200MHz COLLECTOR TO EMITTER VOLTAGE : V (V) CE Fig.10 Noise factor vs. collector voltage ...
Page 4
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...