2SC5060TV2M Rohm Semiconductor, 2SC5060TV2M Datasheet
2SC5060TV2M
Manufacturer Part Number
2SC5060TV2M
Description
TRANS DARL NPN 90V 1A ATV TB
Manufacturer
Rohm Semiconductor
Datasheet
1.2SC5060TV2M.pdf
(4 pages)
Specifications of 2SC5060TV2M
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
90V
Vce Saturation (max) @ Ib, Ic
1.5V @ 1mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
1000 @ 500mA, 3V
Power - Max
1W
Frequency - Transition
80MHz
Mounting Type
Through Hole
Package / Case
ATV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SC5060TV2M
Manufacturer:
ROHM
Quantity:
20 080
Power transistor (9010V, 3A)
Features
1) Built-in zener diode between collector and base.
2) Zener diode has low voltage dispersion.
3) Strong protection against reverse power surges due to “L” loads.
4) Darlington connection for high DC current gain.
5) Built-in resistor between base and emitter.
6) Built-in damper diode.
Inner circuit
Absolute maximum ratings (Ta=25C)
Packaging specifications and h
Electrical characteristics (Ta=25C)
○
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗1 Single pulse Pw=10ms
∗2 Printed circuit board : 1.7 mm thick, collector copper plating at least 100mm
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
∗1 Measured using pulse current. ∗2 Transition frequency of the device.
c
www.rohm.com
B
C
E
2SC5060
2009 ROHM Co., Ltd. All rights reserved.
: Base
: Collector
: Emitter
B
Basic ordering unit (pieces)
Package
Parameter
Type
Code
h
Parameter
R
FE
1
R
R
1
2
3kΩ
1kΩ
R
2
C
E
2SC5060
Symbol
2500
ATV
TV2
V
V
V
Tstg
M
I
P
CBO
CEO
I
Tj
EBO
CP
C
Symbol
C
BV
BV
V
V
BV
I
I
Cob
CE(sat)
BE(sat)
CBO
EBO
t
t
h
f
stg
on
t
CBO
CEO
T
EBO
f
FE
FE
2
.
−55 to +150
1000
Min.
90±10
90±10
Limits
80
80
150
6
−
−
−
−
−
−
−
−
−
6
1
2
1
Typ.
0.2
0.6
80
20
−
−
−
−
−
−
−
−
5
A(Pulse)
Max.
2500
100
100
1.5
A(DC)
10
−
3
2
−
−
−
−
−
Unit
°C
°C
W
V
V
V
MHz
Unit
mA
μA
pF
μs
μs
μs
V
V
V
−
V
V
∗1
∗2
1/3
I
I
I
V
V
V
I
I
V
V
I
I
V
C
C
E
C
C
C
B1
=50μA
=1mA
=5mA
CB
EB
CE
/I
/I
CB
CE
=0.8A, R
CC
= −I
B
B
=5V
=70V
=3V, I
=5V, I
=10V, I
=500mA/1mA
=500mA/1mA
B2
40V
=8mA
C
E
=0.5A
=−0.1A, f=30MHz
L
E
=50Ω
=0A, f=1MHz
Conditions
Dimensions (Unit : mm)
ROHM : ATV
0.65Max.
( 1 )
∗1
∗1
∗2
2.54
( 2 )
6.8
2.54
( 3 )
0.5
(1) Emitter
(2) Collector
(3) Base
2009.12 - Rev.B
1.05
Taping specifications
2.5
0.45
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2SC5060TV2M Summary of contents
Page 1
Power transistor (9010V, 3A) 2SC5060 Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to “L” loads. 4) Darlington connection for high DC current gain. ...
Page 2
0.5 0.2 0.1 0.05 0.02 0.01 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 BASE TO EMITTER VOLTAGE : V (V) BE Fig.1 Ground emitter propagation characteristics 10k ...
Page 3
I (Pulse∗) C(MAX 500m 200m 100m 50m Ta=25°C ∗Single nonrepetitive 20m pulse 10m 0.1 0.2 0 100 COLLECTOR TO EMITTER VOLTAGE : V (V) CE Fig.10 Safe operating ...
Page 4
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...